南方科技大学知识苑(SUSTech KC): Monte Carlo simulation for predicting neutron-induced single-event upset in ferroelectric random access memory

题名	Monte Carlo simulation for predicting neutron-induced single-event upset in ferroelectric random access memory
作者	Zhang, Hong 1,2; Huang, Jing 2; Guo, Hong Xia 1,2; Lei, Zhi Feng 3; Li, Bo1,4
通讯作者	Li, Bo
发表日期	2021-11-01
DOI	10.1080/07315171.2021.1971011
发表期刊	FERROELECTRICS LETTERS SECTION 影响因子和分区
ISSN	0731-5171
EISSN	1563-5228
卷号	48 期号:4-6页码:117-127
摘要	The influence of the single event effects (SEE) induced by neutron up to 14 MeV on ferroelectric random access memory (FRAM) is simulated by the Monte Carlo method. Simulation results show that single-event upset (SEU) occurs in FRAM when the neutron energy is greater than 6 MeV, and the average energy deposition of neutrons in the sensitive volume increases with increasing neutron energy. Neutron SEU in FRAM occurs when the energy deposition of a single secondary particles generated by a nuclear reaction in the sensitive region exceeds the critical energy. The neutron SEU cross-section of FRAM increases exponentially with increasing energy in the range of 6-14 MeV, and the SEU cross-section is about 1.39 x 10(-14) cm(2) at 14 MeV. These findings are due to concomitant increases in the variety and numbers of secondary particles whose energy deposition in the sensitive region exceeds the critical energy.
关键词	Ferroelectric random access memory Monte Carlo method single-event upset energy deposition secondary particles
相关链接	[来源记录]
收录类别	SCI ; EI
语种	英语
学校署名	通讯
资助项目	State Key Laboratory of Intense Pulsed Radiation Simulation and Effect[SKLIPR1816] ; National Natural Science Foundation of China[61704127]
WOS研究方向	Physics
WOS类目	Physics, Condensed Matter
WOS记录号	WOS:000715100300006
出版者	TAYLOR & FRANCIS LTD
EI入藏号	20214611153997
EI主题词	Deposition ; Ferroelectric devices ; Ferroelectric RAM ; Ferroelectricity ; Intelligent systems ; Neutrons ; Nuclear reactions ; Radiation hardening ; Transients
EI分类号	Electricity: Basic Concepts and Phenomena:701.1 ; Data Storage, Equipment and Techniques:722.1 ; Artificial Intelligence:723.4 ; Chemical Operations:802.3 ; Mathematical Statistics:922.2 ; Nuclear Physics:932.2
来源库	Web of Science
引用统计	被引频次[WOS]：1
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/256198
专题	工学院_材料科学与工程系
作者单位	1.Northwest Inst Nucl Technol, State Key Lab Intense Pulsed Radiat Simulat & Eff, Xian, Peoples R China 2.Xiangtan Univ, Sch Mat & Engn, Xiangtan, Hunan, Peoples R China 3.CEPREI, Sci & Technol Reliabil Phys & Applicat Technol El, Guangzhou, Peoples R China 4.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen, Peoples R China
通讯作者单位	材料科学与工程系
推荐引用方式 GB/T 7714	Zhang, Hong,Huang, Jing,Guo, Hong Xia,et al. Monte Carlo simulation for predicting neutron-induced single-event upset in ferroelectric random access memory[J]. FERROELECTRICS LETTERS SECTION,2021,48(4-6):117-127.
APA	Zhang, Hong,Huang, Jing,Guo, Hong Xia,Lei, Zhi Feng,&Li, Bo.(2021).Monte Carlo simulation for predicting neutron-induced single-event upset in ferroelectric random access memory.FERROELECTRICS LETTERS SECTION,48(4-6),117-127.
MLA	Zhang, Hong,et al."Monte Carlo simulation for predicting neutron-induced single-event upset in ferroelectric random access memory".FERROELECTRICS LETTERS SECTION 48.4-6(2021):117-127.