Dirac Fermions in Graphene with Stacking Fault Induced Periodic Line Defects

Kong，Weixiang1; Wang，Rui1; Xiao，Xiaoliang1; Zhan，Fangyang1; Gan，Li Yong1; Wei，Juan1; Fan，Jing2; Wu，Xiaozhi1

2021

10.1021/acs.jpclett.1c02996

Journal of Physical Chemistry Letters   影响因子和分区

1948-7185

1948-7185

The exploration of carbon phases with intact massless Dirac fermions in the presence of defects is critical for practical applications to nanoelectronics. Here, we identify by first-principles calculations that the Dirac cones can exist in graphene with stacking fault (SF) induced periodic line defects. These structures are width (n)-dependent to graphene nanoribbon and are thus termed as (SF)n-graphene. The electronic properties reveal that the semimetallic features with Dirac cones occur in (SF)n-graphene with n = 3m + 1, where m is a positive integer, and then lead to a quasi-one-dimensional conducting channel. Importantly, it is found that the twisted Dirac cone in the (SF)4-graphene is tunable among type-I, type-II, and type-III through a small uniaxial strain. The further stability analysis shows that (SF)n-graphene is thermodynamic stable. Our findings provide an artificial avenue for exploring Dirac Ffermions in carbon-allotropic structures in the presence of defects.

SCI ; EI

英语

NI期刊

其他

National Natural Science Foundation of China[12174040] ; Natural Science Foundation of Chongqing[cstc2020jcyj-msxmX0118]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Atomic, Molecular & Chemical

WOS:000719783300023

AMER CHEMICAL SOC

20214611177741

Calculations ; Electronic properties ; Graphene ; Nanoribbons

Nanotechnology:761 ; Chemical Products Generally:804 ; Mathematics:921 ; Crystal Lattice:933.1.1

2-s2.0-85119061022

Scopus

1.Institute for Structure and Function and Department of Physics,Chongqing University,Chongqing,400044,China
2.Center for Computational Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China

Kong，Weixiang,Wang，Rui,Xiao，Xiaoliang,et al. Dirac Fermions in Graphene with Stacking Fault Induced Periodic Line Defects[J]. Journal of Physical Chemistry Letters,2021,12(44):10874-10879.

Kong，Weixiang.,Wang，Rui.,Xiao，Xiaoliang.,Zhan，Fangyang.,Gan，Li Yong.,...&Wu，Xiaozhi.(2021).Dirac Fermions in Graphene with Stacking Fault Induced Periodic Line Defects.Journal of Physical Chemistry Letters,12(44),10874-10879.

Kong，Weixiang,et al."Dirac Fermions in Graphene with Stacking Fault Induced Periodic Line Defects".Journal of Physical Chemistry Letters 12.44(2021):10874-10879.