Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire

Wang，Jinhuan1,2; Xu，Xiaozhi3; Cheng，Ting4,5; Gu，Lehua6; Qiao，Ruixi1,7; Liang，Zhihua3; Ding，Dongdong1; Hong，Hao1,8; Zheng，Peiming3; Zhang，Zhibin1; Zhang，Zhihong1; Zhang，Shuai9; Cui，Guoliang3; Chang，Chao3; Huang，Chen1; Qi，Jiajie1; Liang，Jing1; Liu，Can1; Zuo，Yonggang1; Xue，Guodong1; Fang，Xinjie1; Tian，Jinpeng10; Wu，Muhong7; Guo，Yi1; Yao，Zhixin11; Jiao，Qingze2; Liu，Lei11; Gao，Peng7; Li，Qunyang9; Yang，Rong10; Zhang，Guangyu10,12; Tang，Zhilie3; Yu，Dapeng13; Wang，Enge7,12,14; Lu，Jianming1; Zhao，Yun2; Wu，Shiwei6; Ding，Feng4,15; Liu，Kaihui1,7,12

2021

10.1038/s41565-021-01004-0

Nature Nanotechnology   影响因子和分区

1748-3387

1748-3395

The growth of wafer-scale single-crystal two-dimensional transition metal dichalcogenides (TMDs) on insulating substrates is critically important for a variety of high-end applications. Although the epitaxial growth of wafer-scale graphene and hexagonal boron nitride on metal surfaces has been reported, these techniques are not applicable for growing TMDs on insulating substrates because of substantial differences in growth kinetics. Thus, despite great efforts, the direct growth of wafer-scale single-crystal TMDs on insulating substrates is yet to be realized. Here we report the successful epitaxial growth of two-inch single-crystal WS monolayer films on vicinal a-plane sapphire surfaces. In-depth characterizations and theoretical calculations reveal that the epitaxy is driven by a dual-coupling-guided mechanism, where the sapphire plane–WS interaction leads to two preferred antiparallel orientations of the WS crystal, and sapphire step edge–WS interaction breaks the symmetry of the antiparallel orientations. These two interactions result in the unidirectional alignment of nearly all the WS islands. The unidirectional alignment and seamless stitching of WS islands are illustrated via multiscale characterization techniques; the high quality of WS monolayers is further evidenced by a photoluminescent circular helicity of ~55%, comparable to that of exfoliated WS flakes. Our findings offer the opportunity to boost the production of wafer-scale single crystals of a broad range of two-dimensional materials on insulators, paving the way to applications in integrated devices.

SCI ; EI

英语

NI论文 ; ESI高被引

其他

WOS:000718769300001

20214611164009

Crystal orientation ; Crystal symmetry ; Epitaxial growth ; Growth kinetics ; III-V semiconductors ; Insulation ; Monolayers ; Sapphire ; Transition metals ; Tungsten compounds

Insulating Materials:413 ; Gems:482.2.1 ; Metallurgy and Metallography:531 ; Semiconducting Materials:712.1 ; Chemical Operations:802.3 ; Crystalline Solids:933.1 ; Crystal Lattice:933.1.1 ; Crystal Growth:933.1.2

2-s2.0-85119001115

Scopus

1.State Key Laboratory for Mesoscopic Physics,Frontiers Science Center for Nano-optoelectronics,School of Physics,Peking University,Beijing,China
2.School of Chemistry and Chemical Engineering,Beijing Institute of Technology,Beijing,China
3.Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials,Guangdong-Hong Kong Joint Laboratory of Quantum Matter,School of Physics and Telecommunication Engineering,South China Normal University,Guangzhou,China
4.Center for Multidimensional Carbon Materials,Institute for Basic Science,Ulsan,South Korea
5.College of Chemistry and Molecular Engineering,Academy for Advanced Interdisciplinary Studies,Peking University,Beijing,China
6.State Key Laboratory of Surface Physics and Department of Physics,Fudan University,Shanghai,China
7.International Center for Quantum Materials,Collaborative Innovation Center of Quantum Matter,Peking University,Beijing,China
8.Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials,Peking University,Beijing,China
9.Department of Engineering Mechanics,State Key Laboratory of Tribology,Tsinghua University,Beijing,China
10.Nanoscale Physics and Devices Laboratory,Institute of Physics,Chinese Academy of Sciences,Beijing,China
11.School of Materials Science and Engineering,Peking University,Beijing,China
12.Songshan Lake Materials Laboratory,Institute of Physics,Chinese Academy of Sciences,Guangdong,China
13.Shenzhen Institute for Quantum Science and Engineering,and Department of Physics,Southern University of Science and Technology,Shenzhen,China
14.School of Physics,Liaoning University,Shenyang,China
15.School of Materials Science and Engineering,Ulsan National Institute of Science and Technology,Ulsan,South Korea

Wang，Jinhuan,Xu，Xiaozhi,Cheng，Ting,et al. Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire[J]. Nature Nanotechnology,2021,17:33-38.

Wang，Jinhuan.,Xu，Xiaozhi.,Cheng，Ting.,Gu，Lehua.,Qiao，Ruixi.,...&Liu，Kaihui.(2021).Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire.Nature Nanotechnology,17,33-38.

Wang，Jinhuan,et al."Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire".Nature Nanotechnology 17(2021):33-38.