Self-rectifying and forming-free resistive switching behaviors in Pt/La2Ti2O7/Pt structure

Deng，Yibo1; Xu，Xiaoguang1; Xu，Zedong2; Wang，Mengxi1; Liu，Qi2; Ma，Yingli1; Chen，Jikun1; Meng，Kangkang1; Wu，Yong1; Miao，Jun1; Jiang，Yong1

2021

10.1016/j.ceramint.2021.11.005

CERAMICS INTERNATIONAL   影响因子和分区

0272-8842

1873-3956

In this work, we report the resistive switching behavior of an amorphous LaTiO (LTO) film as sandwiched between two Pt electrodes. The resistive switching is forming-free and highly uniform. Furthermore, it exhibits self-rectifying resistive switching behaviors owing to the Schottky contact and quasi-ohmic contact formed at the top and bottom interfaces, respectively. The mechanism of switching behavior in the device is attributed to the trapping/detrapping-mediated electronic bipolar resistance switching. By fitting the current-voltage characteristics, it indicates the coexistent conduction mechanisms of Schottky emission and space-charge-limited-conduction (SCLC), while the Schottky barrier modified by electron trapping/detrapping plays a dominating role in the resistive switching process.

Forming-free Lanthanum titanium oxide Resistive switching Schottky barrier Self-rectifying

SCI ; EI

英语

其他

National Key Research and Development Program of China[2019YFB2005801] ; National Natural Science Foundation of China[52061135205,51731003,51971024,51971023,51971027,51927802] ; Beijing Natural Science Foundation Key Program[Z190007]

Materials Science

Materials Science, Ceramics

WOS:000743874300004

ELSEVIER SCI LTD

20214611154944

Current voltage characteristics ; Electric space charge ; Lanthanum compounds ; Ohmic contacts ; Switching ; Titanium oxides

Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Inorganic Compounds:804.2

MATERIALS SCIENCE

2-s2.0-85118892380

Scopus

1.School of Materials Science and Engineering,University of Science and Technology Beijing,Beijing,100083,China
2.Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China

Deng，Yibo,Xu，Xiaoguang,Xu，Zedong,et al. Self-rectifying and forming-free resistive switching behaviors in Pt/La2Ti2O7/Pt structure[J]. CERAMICS INTERNATIONAL,2021,48(4):4693-4698.

Deng，Yibo.,Xu，Xiaoguang.,Xu，Zedong.,Wang，Mengxi.,Liu，Qi.,...&Jiang，Yong.(2021).Self-rectifying and forming-free resistive switching behaviors in Pt/La2Ti2O7/Pt structure.CERAMICS INTERNATIONAL,48(4),4693-4698.

Deng，Yibo,et al."Self-rectifying and forming-free resistive switching behaviors in Pt/La2Ti2O7/Pt structure".CERAMICS INTERNATIONAL 48.4(2021):4693-4698.