Dry transfer method for suspended graphene on lift-off-resist: simple ballistic devices with Fabry-Perot interference

Liu, Ying1,2; Abhilash, T. S.2; Laitinen, Antti2; Tan, Zhenbing2,3,4; Liu, Guan-jun1; Hakonen, Pertti2

2019-06-21

10.1088/1361-6528/ab0d30

NANOTECHNOLOGY   影响因子和分区

0957-4484

1361-6528

We demonstrate a fabrication scheme for clean suspended structures using chemical-vapordeposition-grown graphene and a dry transfer method on lift-off-resist-coated substrates to facilitate suspended graphene nanoelectronic devices for technological applications. It encompasses the demands for scalable fabrication as well as for ultra-fast response due to weak coupling to environment. The fabricated devices exhibited initially a weak field-effect response with substantial positive (p) doping which transformed into weak negative (n) doping upon current annealing at the temperature of 4 K. With increased annealing current, n-doping gradually decreased while the Dirac peak position approached zero in gate voltage. An ultra-low residual charge density of 9 x 10(8) cm(-2) and a mobility of 1.9 x 10(5) cm(2) V-1 s(-1) were observed. Our samples display clear Fabry-Perot (FP) conductance oscillation which indicates ballistic electron transport. The spacings of the FP oscillations are found to depend on the charge density in a manner that agrees with theoretical modeling based on Klein tunneling of Dirac particles. The ultra-low residual charge, the FP oscillations with density dependent period, and the high mobility prove the excellent quality of our suspended graphene devices. Owing to its simplicity, scalability and robustness, this fabrication scheme enhances possibilities for production of suspended, high-quality, two-dimensional-material structures for novel electronic applications.

quantum technology suspended graphene ballistic transport current annealing negative doping Fabry-Perot interference

SCI ; EI

英语

其他

European Union[824109]

Science & Technology - Other Topics ; Materials Science ; Physics

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied

WOS:000463546900001

IOP PUBLISHING LTD

20191906882676

Annealing ; Ballistics ; Chemical vapor deposition ; Electron transport properties ; Fabrication ; Fabry-Perot interferometers ; Graphene ; Quantum chemistry ; Substrates

Military Engineering:404.1 ; Heat Treatment Processes:537.1 ; Nanotechnology:761 ; Physical Chemistry:801.4 ; Chemical Reactions:802.2 ; Chemical Products Generally:804 ; Optical Instruments:941.3

MATERIALS SCIENCE

Web of Science

1.Natl Univ Def Technol, Sci & Technol Integrated Logist Support Lab, Changsha 410073, Hunan, Peoples R China
2.Aalto Univ, Dept Appl Phys, Low Temp Lab, FI-02150 Espoo, Finland
3.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China
4.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China

Liu, Ying,Abhilash, T. S.,Laitinen, Antti,et al. Dry transfer method for suspended graphene on lift-off-resist: simple ballistic devices with Fabry-Perot interference[J]. NANOTECHNOLOGY,2019,30(25).

Liu, Ying,Abhilash, T. S.,Laitinen, Antti,Tan, Zhenbing,Liu, Guan-jun,&Hakonen, Pertti.(2019).Dry transfer method for suspended graphene on lift-off-resist: simple ballistic devices with Fabry-Perot interference.NANOTECHNOLOGY,30(25).

Liu, Ying,et al."Dry transfer method for suspended graphene on lift-off-resist: simple ballistic devices with Fabry-Perot interference".NANOTECHNOLOGY 30.25(2019).