The enhancement of thermoelectric performance of p-type Li doped Mg2Ge0.4Sn0.6 by Si addition

Yuan, Guocai1; Han, Shaobo2; Lei, Xiaobo1; Hu, Jizhen2; Liu, Weishu2; Wang, Qi2; Chen, Chen3; Zhang, Qian3; Zhang, Qinyong1; Gu, Meng2

2019-06

10.1016/j.scriptamat.2019.03.011

SCRIPTA MATERIALIA   影响因子和分区

1359-6462

Mg-2(Ge, Sn) solid solutions are eco-friendly thermoelectric materials in moderate temperature (500-800 K) range. However, p-type Mg-2(Ge, Sn) solid solutions show poor thermoelectric performance compared to the n-type counterpart. In this work, the filtering of low energy holes and the blocking of thermal excited electrons in Mg1.92Li0.08Ge0.4Sn0.6 by Si addition are demonstrated, which optimize the power factor by interface barrier and reduce the lattice thermal conductivity by nanoscale composition fluctuation. Finally, the power factor of similar to 1.85 x 10(-3) Wm(-1) K-2 and the dimensionless figure of merit ZT similar to 0.75 are achieved in Li doped Mg2Ge0.4Sn0.6 with Si addition at 723 K. (C) 2019 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Thermoelectric materials Mg2Ge0.4Sn0.6 Bipolar effect Dual barriers Lattice thermal conductivity

SCI ; EI

英语

通讯

Science and Technology Foundation of Sichuan Province[2015GZ0060] ; Science and Technology Foundation of Sichuan Province[15TD0014] ; Science and Technology Foundation of Sichuan Province[18-163-13-ZT-001-002-08]

Science & Technology - Other Topics ; Materials Science ; Metallurgy & Metallurgical Engineering

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering

WOS:000466251000026

PERGAMON-ELSEVIER SCIENCE LTD

20191206665384

Binary alloys ; Crystal lattices ; Electric power factor ; Lithium ; Lithium alloys ; Magnesium alloys ; Semiconductor alloys ; Silicon ; Solid solutions ; Thermal conductivity ; Thermoelectric equipment ; Thermoelectricity ; Tin alloys

Tin and Alloys:546.2 ; Nonferrous Metals and Alloys:549 ; Thermoelectric Energy:615.4 ; Thermodynamics:641.1 ; Electricity: Basic Concepts and Phenomena:701.1 ; Solid State Physics:933 ; Crystal Lattice:933.1.1

MATERIALS SCIENCE

Web of Science

1.Xihua Univ, Dept Mat Sci & Engn, Chengdu 610039, Sichuan, Peoples R China
2.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China
3.Harbin Inst Technol, Dept Mat Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China

Yuan, Guocai,Han, Shaobo,Lei, Xiaobo,et al. The enhancement of thermoelectric performance of p-type Li doped Mg2Ge0.4Sn0.6 by Si addition[J]. SCRIPTA MATERIALIA,2019,166:122-127.

Yuan, Guocai.,Han, Shaobo.,Lei, Xiaobo.,Hu, Jizhen.,Liu, Weishu.,...&Gu, Meng.(2019).The enhancement of thermoelectric performance of p-type Li doped Mg2Ge0.4Sn0.6 by Si addition.SCRIPTA MATERIALIA,166,122-127.

Yuan, Guocai,et al."The enhancement of thermoelectric performance of p-type Li doped Mg2Ge0.4Sn0.6 by Si addition".SCRIPTA MATERIALIA 166(2019):122-127.