Black Phosphorous/Indium Selenide Photoconductive Detector for Visible and Near-Infrared Light with High Sensitivity

Cao, Rui1,2; Wang, Hui-De1,3,4; Guo, Zhi-Nan1; Sang, David K.1; Zhang, Li-Yuan3,4; Xiao, Quan-Lan1; Zhang, Yu-Peng1; Fan, Dian-Yuan1; Li, Jian-Qing2; Zhang, Han1

2019-06

10.1002/adom.201900020

Advanced Optical Materials   影响因子和分区

2195-1071

2D materials offer tremendous opportunities for designing and investigating multifunctional high-performance electronic and optoelectronic devices. In this contribution, a photogate vertical structure is devised by vertically stacking layered indium selenide (InSe) on top of layered black phosphorous (BP). The photodetector built with the vertical structure possesses a wide response range from 405 to 1550 nm, and the photodetector exhibits a relatively fast (approximate to 22 ms) response and high responsivity of approximate to 53.80 A W-1 at lambda = 655 nm and 43.11 A W-1 at lambda = 1550 nm, respectively. Under visible-light illumination (lambda = 655 nm), the external quantum efficiency of the device can reach 1020%. By taking advantage of gate-tunable modulation, the forward-to-reverse bias current ratio is as high as 10(3). In addition, the environmental degradation of BP could be effectively suppressed by InSe capping. The high sensitivity, broad spectral response, and enhanced stability of the photodetector show that the photogate structure provides a new opportunity for broad spectral detection or imaging at room temperature by using 2D materials with a vertical structure.

black phosphorus indium selenide photoconductive detector vertical structure

SCI ; EI

英语

其他

Science and Technology Development Fund, Macao SAR, China[007/2017/A1] ; Science and Technology Development Fund, Macao SAR, China[132/2017/A3]

Materials Science ; Optics

Materials Science, Multidisciplinary ; Optics

WOS:000471918700017

WILEY-V C H VERLAG GMBH

20191406723729

Infrared devices ; Light ; Optoelectronic devices ; Photoconductivity ; Photodetectors ; Photons

Light/Optics:741.1 ; Atomic and Molecular Physics:931.3

Web of Science

1.Shenzhen Univ, Shenzhen Engn Lab Phosphorene & Optoelect, Int Collaborat Lab 2D Mat Optoelect Sci & Technol, Coll Optoelect Engn,Engn Technol Res Ctr 2D Mat I, Shenzhen 518060, Peoples R China
2.Macau Univ Sci & Technol, Fac Informat Technol, Ave Wai Long, Taipa 999078, Macao, Peoples R China
3.Southern Univ Sci & Technol, Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China
4.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China

Cao, Rui,Wang, Hui-De,Guo, Zhi-Nan,et al. Black Phosphorous/Indium Selenide Photoconductive Detector for Visible and Near-Infrared Light with High Sensitivity[J]. Advanced Optical Materials,2019,7(12).

Cao, Rui.,Wang, Hui-De.,Guo, Zhi-Nan.,Sang, David K..,Zhang, Li-Yuan.,...&Zhang, Han.(2019).Black Phosphorous/Indium Selenide Photoconductive Detector for Visible and Near-Infrared Light with High Sensitivity.Advanced Optical Materials,7(12).

Cao, Rui,et al."Black Phosphorous/Indium Selenide Photoconductive Detector for Visible and Near-Infrared Light with High Sensitivity".Advanced Optical Materials 7.12(2019).