Anisotropy dependence of material removal and deformation mechanisms during nanoscratch of gallium nitride single crystals on (0001) plane

Li，Chen1; Piao，Yinchuan1; Meng，Binbin2; Zhang，Yong1; Li，Longqiu1; Zhang，Feihu1

2022-03-15

10.1016/j.apsusc.2021.152028

APPLIED SURFACE SCIENCE   影响因子和分区

0169-4332

1873-5584

Gallium nitride single crystal (GaN) is difficult to achieve high-efficiency and low-damage machining due to anisotropy, high hardness and brittleness. Nanoscratch tests of GaN single crystals was conducted on (0001) plane along different zone axes, and the anisotropy dependence of material removal and deformation behaviors were investigated systematically. The results showed that crack-free plastic deformation of GaN crystals could be acquired along different zone axes, which was dominated by phase transition, polycrystalline nanocrystals, amorphous transition, as well as close-to-atomic scale damages including stacking faults, dislocations and lattice distortions. As the stress increases, special surface radial cracks with the same orientations caused by shear stress will appear on the groove surface, and striated and step-shaped brittle fractures can be induced by the propagation and intersection of the cracks. The processing along [11–20] zone axis was more conducive to achieve the plastic removal and deformation, deeper penetration depth and less phase transformation. The higher stress along [1–100] zone axis induced more phase transition from hexagonal system to cubic system. This work will enhance the understanding of the anisotropy dependence of material removal and damage mechanisms, and provide a guide for achieving high-efficiency and low-damage machining of GaN crystals.

Anisotropy Brittle-to-ductile transition Gallium nitride single crystal Nanoscratch Phase transition Subsurface damage

SCI ; EI

英语

其他

National Natural Science Foundation of China[52005134,51975154] ; China Postdoctoral Science Foundation[2020M670901] ; Heilongjiang Postdoctoral Fund[LBH-Z20016]

Chemistry ; Materials Science ; Physics

Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter

WOS:000729506400002

ELSEVIER

20214811256209

Cracks ; Efficiency ; Fracture mechanics ; Gallium nitride ; III-V semiconductors ; Nanotechnology ; Shear stress ; Single crystals

Semiconducting Materials:712.1 ; Nanotechnology:761 ; Production Engineering:913.1 ; Mechanics:931.1 ; Physical Properties of Gases, Liquids and Solids:931.2 ; Crystalline Solids:933.1

MATERIALS SCIENCE

2-s2.0-85120180036

Scopus

1.School of Mechatronics Engineering,Harbin Institute of Technology,Harbin,150001,China
2.Department of Mechanical and Energy Engineering,Southern University of Science and Technology,Shenzhen,518055,China

Li，Chen,Piao，Yinchuan,Meng，Binbin,et al. Anisotropy dependence of material removal and deformation mechanisms during nanoscratch of gallium nitride single crystals on (0001) plane[J]. APPLIED SURFACE SCIENCE,2022,578.

Li，Chen,Piao，Yinchuan,Meng，Binbin,Zhang，Yong,Li，Longqiu,&Zhang，Feihu.(2022).Anisotropy dependence of material removal and deformation mechanisms during nanoscratch of gallium nitride single crystals on (0001) plane.APPLIED SURFACE SCIENCE,578.

Li，Chen,et al."Anisotropy dependence of material removal and deformation mechanisms during nanoscratch of gallium nitride single crystals on (0001) plane".APPLIED SURFACE SCIENCE 578(2022).