Study on material removal mechanisms in electrochemical etching-enhanced polishing of GaN

Zhang，Linfeng; Lu，Dong; Deng，Hui

2022

10.1016/j.jmapro.2021.11.059

Journal of Manufacturing Processes   影响因子和分区

1526-6125

2212-4616

Electrochemical etching has been proven to be a highly effective method for the removal of GaN materials. In this work, the material removal mechanisms in electrochemical-enhanced polishing process are studied from two aspects: carrier behavior and mechanical removal. It is found that the distribution of carriers can be altered along the polar plane by the electric field during electrochemical etching and will not recover spontaneously. A layer of excess carriers would accumulate on the Ga-face after electrochemical etching and cause severe surface oxidation during sample preservation. Additionally, it is revealed that the etched surface morphology can be divided into two types: protrusions and pits, depending on the excessive carrier density. Mechanical polishing is conducted on the pre-etched and non-etched surface, respectively. The pre-etched surface demonstrates better ductility than that of the non-etched surface owing to the formation of porous structure during electrochemical etching. The surface quality is also desirable which is confirmed by the photoluminescence (PL) spectra. The electrochemical etching-enhanced polishing can be considered as a semi-final processing technique that efficiently removes the damaged layer and reduces the surface roughness to sub-nanometer level.

Ductility Electrochemical etching Polishing Surface carrier accumulation

SCI ; EI

英语

第一 ; 通讯

National Natural Science Foundation of China[52035009,52005243] ; Science, Technology and Innovation Commission of Shenzhen Municipality[JCYJ20200109141003910]

Engineering

Engineering, Manufacturing

WOS:000740936000002

ELSEVIER SCI LTD

20214911293755

Electric fields ; Electrochemical etching ; Gallium nitride ; III-V semiconductors ; Morphology ; Polishing ; Surface morphology ; Surface roughness

Machining Operations:604.2 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Physical Properties of Gases, Liquids and Solids:931.2 ; Materials Science:951

2-s2.0-85120648134

Scopus

Department of Mechanical and Energy Engineering,Southern University of Science and Technology,Shenzhen,No. 1088, Xueyuan Road,518055,China

Zhang，Linfeng,Lu，Dong,Deng，Hui. Study on material removal mechanisms in electrochemical etching-enhanced polishing of GaN[J]. Journal of Manufacturing Processes,2022,73:903-913.

Zhang，Linfeng,Lu，Dong,&Deng，Hui.(2022).Study on material removal mechanisms in electrochemical etching-enhanced polishing of GaN.Journal of Manufacturing Processes,73,903-913.

Zhang，Linfeng,et al."Study on material removal mechanisms in electrochemical etching-enhanced polishing of GaN".Journal of Manufacturing Processes 73(2022):903-913.