Oxygen-plasma-based digital etching for gan/algan high electron mobility transistors

Wu，Jingyi1,2; Yu，Hongyu1,2; Jiang，Yang1,2; Wan，Zeyu1,4; Lei，Siqi1,2,3; Cheng，Wei Chih1,5; Zhou，Guangnan1,2,6; Sokolovskij，Robert1; Wang，Qing1,5; Xia，Guangrui Maggie1,7,8

10.1109/ASICON47005.2019.8983678

2019-10-01

IEEE International Conference on Asic

2162-7541

2162-755X

Proceedings of International Conference on ASIC

2019

Chongqing, China

第一

英语

EI

20201408379243

Semiconductor alloys ; Wide band gap semiconductors ; III-V semiconductors ; High electron mobility transistors ; Aluminum gallium nitride ; Aluminum nitride ; Gallium nitride ; Oxygen

Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Chemical Reactions:802.2 ; Chemical Products Generally:804 ; Organic Compounds:804.1 ; Inorganic Compounds:804.2

2-s2.0-85082614551

Scopus

1.School of Microelectronics,Southern University of Science and Technology,Shenzhen, Guangdong,518055,China
2.Department of Electric and Electronics Engineering,Southern University of Science and Technology,Shenzhen, Guangdong,518055,China
3.Harbin Institute of Technology,China
4.Department of Electronic and Computer Engineering,Hong Kong University of Science and Technology,Hong Kong,Hong Kong
5.Department of Materials Engineering,University of British Columbia,Vancouver,Canada
6.Department of Microelectronics,Delft University of Technology,Delft,Netherlands
7.GaN Device Engineering Technology Research,Center of Guangdong,Southern,University of Science and Technology,Shenzhen, Guangdong,518055,China
8.Key Laboratory of the Third Generation Semiconductors,Southern University of Science and Technology,Shenzhen, Guangdong,518055,China

Wu，Jingyi,Yu，Hongyu,Jiang，Yang,et al. Oxygen-plasma-based digital etching for gan/algan high electron mobility transistors[C],2019.