Switching model of taox-based nonpolar resistive random access memory

Tong，Xin1; Wu，Wenjuan1; Liu，Zhe1; Tran，Xuan Anh2; Yu，Hong Yu3; Yeo，Yee Chia1

2013

10.7567/JJAP.52.04CD03

JAPANESE JOURNAL OF APPLIED PHYSICS   影响因子和分区

0021-4922

1347-4065

We report on a novel TaOx-based nonpolar resistive random access memory (RRAM) cell design with a Cr/TaOx /Al (top-to-bottom) structure. Extensive studies of the switching mechanism of the nonpolar RRAM were performed. The thermal coefficient of resistance of the RRAM in the low-resistance state is observed to adopt different polarities depending on how the preceding set operation was performed. On the basis of this observation, the coexistence of metallic ions and oxygen vacancies in the dominant filament is deduced, and a hybrid filament hypothesis is proposed for the first time to explain the observations. A switching model is provided to explain the microscopic changes in the nonpolar TaOx-based RRAM. © 2013 The Japan Society of Applied Physics.

SCI ; EI

英语

其他

WOS:000320002400051

20133116571104

RRAM

Data Storage, Equipment and Techniques:722.1 ; Crystalline Solids:933.1

PHYSICS

2-s2.0-84880843288

Scopus

1.Department of Electrical and Computer Engineering,National University of Singapore (NUS),117576 Singapore,Singapore
2.School of EEE,Nanyang Technological University,639798 Singapore,Singapore
3.South University of Science and Technology of China,Shenzhen, 51805,China

Tong，Xin,Wu，Wenjuan,Liu，Zhe,et al. Switching model of taox-based nonpolar resistive random access memory[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2013,52(4 PART 2).

Tong，Xin,Wu，Wenjuan,Liu，Zhe,Tran，Xuan Anh,Yu，Hong Yu,&Yeo，Yee Chia.(2013).Switching model of taox-based nonpolar resistive random access memory.JAPANESE JOURNAL OF APPLIED PHYSICS,52(4 PART 2).

Tong，Xin,et al."Switching model of taox-based nonpolar resistive random access memory".JAPANESE JOURNAL OF APPLIED PHYSICS 52.4 PART 2(2013).