The effect of the undoped GaN/buffer-layer interface on the operation of Schottky diodes and MESFET devices

Elahi, Asim M. Noor1,2; Atalla, Mahmoud R. M.1,3; Mo, Chen1; Zhang, Wenjun1; Liu, Shengshi1; Zhang, Zhifang1; Jiang, Zhenyu1; Liu, Jie1; Sun, Xiaowei4; Chang, Min5; Zhang, Xuedian5; Hsu, Jian1

2019-06

10.1016/j.mee.2019.02.006

MICROELECTRONIC ENGINEERING   影响因子和分区

0167-9317

1873-5568

The effect of the interfacial region lying in between undoped GaN (u-GaN) and the buffer-layer on the forward current properties of lateral-type GaN Schottky diodes and planner GaN metal-semiconductor-field-effect-transistors (MESFETs) grown on sapphire substrates has been investigated. Experimental results have revealed higher current densities for devices grown on patterned sapphire substrates (PSS) compared to flat sapphire substrates (FSS) owing to the different carrier transport properties of the interfacial regions. Simulations using the charge transport model showed a good agreement with the experimental results. It is disclosed that the interfacial region is acting as channel in which the current passes in between the device metallic contacts. Owing to the presence of the interfacial regions, the lateral Schottky diodes exhibit high current densities but without change in their on-state-voltage, whereas the planar MESFETs could hardly reach cut-off or show saturation behavior. Studying the effect of the interfacial region on the operation of GaN power devices would help in optimizing the device design and efficiency, and further facilitate their monolithic integration with GaN-based LEDs.

MESFETs Schottky barrier lowering Schottky photodiode Surface states

SCI ; EI

英语

其他

NSF CAREER grant[415-37 60D2]

Engineering ; Science & Technology - Other Topics ; Optics ; Physics

Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Optics ; Physics, Applied

WOS:000472127800006

ELSEVIER SCIENCE BV

20191906883526

Buffer layers ; Gallium nitride ; III-V semiconductors ; MESFET devices ; Power semiconductor devices ; Sapphire ; Schottky barrier diodes ; Semiconductor diodes ; Substrates ; Surface states ; Wide band gap semiconductors

Gems:482.2.1 ; Compound Semiconducting Materials:712.1.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Classical Physics; Quantum Theory; Relativity:931 ; High Energy Physics; Nuclear Physics; Plasma Physics:932 ; Crystalline Solids:933.1

ENGINEERING

Web of Science

1.Penn State Univ, Dept Engn Sci & Mech, Photon & Oproelect Devices Grp, 227 Hammond Bldg, University Pk, PA 16802 USA
2.Taibah Univ, Dept Elect Engn, Fac Engn, Madinah, Saudi Arabia
3.Mansoura Univ, Dept Phys, Fac Sci, Mansoura 35516, Egypt
4.Southern Univ Sci & Technol, Coll Engn, Shenzhen, Peoples R China
5.Univ Shanghai Sci & Technol, Shanghai, Peoples R China

Elahi, Asim M. Noor,Atalla, Mahmoud R. M.,Mo, Chen,et al. The effect of the undoped GaN/buffer-layer interface on the operation of Schottky diodes and MESFET devices[J]. MICROELECTRONIC ENGINEERING,2019,214:38-43.

Elahi, Asim M. Noor.,Atalla, Mahmoud R. M..,Mo, Chen.,Zhang, Wenjun.,Liu, Shengshi.,...&Hsu, Jian.(2019).The effect of the undoped GaN/buffer-layer interface on the operation of Schottky diodes and MESFET devices.MICROELECTRONIC ENGINEERING,214,38-43.

Elahi, Asim M. Noor,et al."The effect of the undoped GaN/buffer-layer interface on the operation of Schottky diodes and MESFET devices".MICROELECTRONIC ENGINEERING 214(2019):38-43.