中文版 | English
题名

Enhancing hole injection by electric dipoles for efficient blue InP QLEDs

作者
通讯作者Wu,Dan; Sun,Xiao Wei; Wang,Kai
发表日期
2021-11-29
DOI
发表期刊
ISSN
0003-6951
EISSN
1077-3118
卷号119期号:22
摘要
The unbalanced carrier injection is a key factor that deteriorates the performance of blue InP quantum dot light-emitting diodes (QLEDs). Therefore, to achieve efficient blue InP QLEDs, an effective strategy that balances carrier injection through enhancing the hole injection and transport is in demand. In this study, we introduced an ultrathin MoO3 electric dipole layer between the hole injection layer and the hole transport layer (HTL) to form a pair of dipole-induced built-in electric fields with forward resultant direction to enhance hole injection and facilitate the balance of carrier injection. Meanwhile, the p-doping effect by MoO3 leads to increased carrier concentration and decreased trap density of interfacial HTL, therefore improved its effective hole mobility. Consequently, the maximal external quantum efficiency of blue InP QLEDs was enhanced from 1.0% to 2.1%. This work provides an effective method to balance carrier injection by modulating hole injection and transport, indicating the feasibility to realize high-efficiency QLEDs.
相关链接[Scopus记录]
收录类别
SCI ; EI
语种
英语
重要成果
NI论文
学校署名
第一 ; 通讯
资助项目
National Key Research and Development Program[
WOS研究方向
Physics
WOS类目
Physics, Applied
WOS记录号
WOS:000754310500005
出版者
EI入藏号
20215011309363
EI主题词
Carrier concentration ; Charge injection ; Efficiency ; Electric fields ; Electron injection ; Hole mobility ; III-V semiconductors ; Indium phosphide ; Molybdenum oxide ; Quantum efficiency ; Semiconducting indium phosphide ; Semiconductor quantum dots
EI分类号
Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Compound Semiconducting Materials:712.1.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2 ; Production Engineering:913.1 ; Quantum Theory; Quantum Mechanics:931.4
ESI学科分类
PHYSICS
Scopus记录号
2-s2.0-85120744908
来源库
Scopus
引用统计
被引频次[WOS]:15
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/258147
专题工学院_电子与电气工程系
作者单位
1.Guangdong University Key Lab for Advanced Quantum Dot Displays and Lighting,Guangdong-Hong Kong-Macao Jt. Lab. for Photonic-Thermal-Electrical Energy Materials and Devices,Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China
2.Key Laboratory of Energy Conversion and Storage Technologies,Southern University of Science and Technology,Ministry of Education,Shenzhen,518055,China
3.Department of Electrical and Electronic Engineering,The University of Hong Kong,Hongkong,999077,Hong Kong
4.College of New Materials and New Energies,Shenzhen Technology University,Shenzhen,518118,China
第一作者单位电子与电气工程系;  南方科技大学
通讯作者单位电子与电气工程系;  南方科技大学
第一作者的第一单位电子与电气工程系
推荐引用方式
GB/T 7714
Tan,Yangzhi,Zhang,Wenda,Xiao,Xiangtian,et al. Enhancing hole injection by electric dipoles for efficient blue InP QLEDs[J]. APPLIED PHYSICS LETTERS,2021,119(22).
APA
Tan,Yangzhi.,Zhang,Wenda.,Xiao,Xiangtian.,Sun,Jiayun.,Ma,Jingrui.,...&Wang,Kai.(2021).Enhancing hole injection by electric dipoles for efficient blue InP QLEDs.APPLIED PHYSICS LETTERS,119(22).
MLA
Tan,Yangzhi,et al."Enhancing hole injection by electric dipoles for efficient blue InP QLEDs".APPLIED PHYSICS LETTERS 119.22(2021).
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