题名 | Enhancing hole injection by electric dipoles for efficient blue InP QLEDs |
作者 | |
通讯作者 | Wu,Dan; Sun,Xiao Wei; Wang,Kai |
发表日期 | 2021-11-29
|
DOI | |
发表期刊 | |
ISSN | 0003-6951
|
EISSN | 1077-3118
|
卷号 | 119期号:22 |
摘要 | The unbalanced carrier injection is a key factor that deteriorates the performance of blue InP quantum dot light-emitting diodes (QLEDs). Therefore, to achieve efficient blue InP QLEDs, an effective strategy that balances carrier injection through enhancing the hole injection and transport is in demand. In this study, we introduced an ultrathin MoO3 electric dipole layer between the hole injection layer and the hole transport layer (HTL) to form a pair of dipole-induced built-in electric fields with forward resultant direction to enhance hole injection and facilitate the balance of carrier injection. Meanwhile, the p-doping effect by MoO3 leads to increased carrier concentration and decreased trap density of interfacial HTL, therefore improved its effective hole mobility. Consequently, the maximal external quantum efficiency of blue InP QLEDs was enhanced from 1.0% to 2.1%. This work provides an effective method to balance carrier injection by modulating hole injection and transport, indicating the feasibility to realize high-efficiency QLEDs. |
相关链接 | [Scopus记录] |
收录类别 | |
语种 | 英语
|
重要成果 | NI论文
|
学校署名 | 第一
; 通讯
|
资助项目 | National Key Research and Development Program[
|
WOS研究方向 | Physics
|
WOS类目 | Physics, Applied
|
WOS记录号 | WOS:000754310500005
|
出版者 | |
EI入藏号 | 20215011309363
|
EI主题词 | Carrier concentration
; Charge injection
; Efficiency
; Electric fields
; Electron injection
; Hole mobility
; III-V semiconductors
; Indium phosphide
; Molybdenum oxide
; Quantum efficiency
; Semiconducting indium phosphide
; Semiconductor quantum dots
|
EI分类号 | Electricity: Basic Concepts and Phenomena:701.1
; Semiconducting Materials:712.1
; Compound Semiconducting Materials:712.1.2
; Semiconductor Devices and Integrated Circuits:714.2
; Chemical Products Generally:804
; Inorganic Compounds:804.2
; Production Engineering:913.1
; Quantum Theory; Quantum Mechanics:931.4
|
ESI学科分类 | PHYSICS
|
Scopus记录号 | 2-s2.0-85120744908
|
来源库 | Scopus
|
引用统计 |
被引频次[WOS]:15
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/258147 |
专题 | 工学院_电子与电气工程系 |
作者单位 | 1.Guangdong University Key Lab for Advanced Quantum Dot Displays and Lighting,Guangdong-Hong Kong-Macao Jt. Lab. for Photonic-Thermal-Electrical Energy Materials and Devices,Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China 2.Key Laboratory of Energy Conversion and Storage Technologies,Southern University of Science and Technology,Ministry of Education,Shenzhen,518055,China 3.Department of Electrical and Electronic Engineering,The University of Hong Kong,Hongkong,999077,Hong Kong 4.College of New Materials and New Energies,Shenzhen Technology University,Shenzhen,518118,China |
第一作者单位 | 电子与电气工程系; 南方科技大学 |
通讯作者单位 | 电子与电气工程系; 南方科技大学 |
第一作者的第一单位 | 电子与电气工程系 |
推荐引用方式 GB/T 7714 |
Tan,Yangzhi,Zhang,Wenda,Xiao,Xiangtian,et al. Enhancing hole injection by electric dipoles for efficient blue InP QLEDs[J]. APPLIED PHYSICS LETTERS,2021,119(22).
|
APA |
Tan,Yangzhi.,Zhang,Wenda.,Xiao,Xiangtian.,Sun,Jiayun.,Ma,Jingrui.,...&Wang,Kai.(2021).Enhancing hole injection by electric dipoles for efficient blue InP QLEDs.APPLIED PHYSICS LETTERS,119(22).
|
MLA |
Tan,Yangzhi,et al."Enhancing hole injection by electric dipoles for efficient blue InP QLEDs".APPLIED PHYSICS LETTERS 119.22(2021).
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条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
5.0071508.pdf(1618KB) | -- | -- | 限制开放 | -- |
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