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题名

Conformal Growth of Cr2Te3on Bi2Te3Nanodots with a Topological Hall Effect

作者
通讯作者He,Hongtao; Wang,Gan
发表日期
2022
DOI
发表期刊
ISSN
1528-7483
EISSN
1528-7505
卷号22期号:1页码:140-147
摘要

The conformal growth of a high-quality ferromagnet (Cr2Te3) on the nanostructures of a topological insulator (Bi2Te3) was realized via molecular beam epitaxy (MBE). A large topological Hall effect (THE) (∼400 nω cm) was unambiguously observed up to 95 K, which provided the evidence for the existence of magnetic spin textures such as magnetic skyrmions in this system. Detailed atomic structure characterizations revealed that black-phosphorus-like Bi nanosheets were embedded in the Cr2Te3 lattice and densely stacked above the Bi2Te3 nanodots. A nanoscale formation mechanism of the embedded Bi nanosheets was then proposed, demonstrating that the embedded Bi nanosheets were released from the Bi2Te3 nanodots in the van der Waals epitaxy process of Cr2Te3. Remarkably, as the large spin-orbital coupling of the embedded Bi nanosheets can stimulate the generation of magnetic skyrmions at the interfaces between them and Cr2Te3, the observed large THE may be attributed to the skyrmions on the densely stacked Bi nanosheets. In summary, our findings demonstrate the reaction between transition-metal Cr and Bi2Te3 in the conformal growth of Cr2Te3 on Bi2Te3 nanodots and provide an efficient and scalable technique to realize future spintronic devices.

相关链接[Scopus记录]
收录类别
SCI ; EI
语种
英语
学校署名
第一 ; 通讯
WOS研究方向
Chemistry ; Crystallography ; Materials Science
WOS类目
Chemistry, Multidisciplinary ; Crystallography ; Materials Science, Multidisciplinary
WOS记录号
WOS:000767204000016
出版者
EI入藏号
20214911284605
EI主题词
Molecular Beam Epitaxy ; Nanosheets ; Spin Hall Effect ; Tellurium Compounds ; Topological Insulators ; Topology ; Transition Metals ; Van Der Waals Forces
EI分类号
Metallurgy And Metallography:531 ; Magnetism: Basic Concepts And Phenomena:701.2 ; Nanotechnology:761 ; Physical Chemistry:801.4 ; Combinatorial Mathematics, Includes Graph Theory, Set Theory:921.4 ; Atomic And Molecular Physics:931.3 ; Solid State Physics:933 ; Crystal Growth:933.1.2
ESI学科分类
CHEMISTRY
来源库
Web of Science
引用统计
被引频次[WOS]:3
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/258183
专题理学院_物理系
量子科学与工程研究院
公共分析测试中心
作者单位
1.Department of Physics,Shenzhen Institute for Quantum Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China
2.Department of Physics,National University of Singapore,Singapore,2 Science Drive 3,117551,Singapore
3.College of Physics Science and Technology,Yangzhou University,Yangzhou,225002,China
4.Core Research Facilities,Southern University of Science and Technology,Shenzhen,518055,China
5.Guangdong Provincial Key Laboratory of Quantum Science and Engineering,Shenzhen,518055,China
第一作者单位物理系;  量子科学与工程研究院
通讯作者单位物理系;  量子科学与工程研究院
第一作者的第一单位物理系;  量子科学与工程研究院
推荐引用方式
GB/T 7714
Chen,Junshu,Zhou,Liang,Wang,Linjing,et al. Conformal Growth of Cr2Te3on Bi2Te3Nanodots with a Topological Hall Effect[J]. CRYSTAL GROWTH & DESIGN,2022,22(1):140-147.
APA
Chen,Junshu.,Zhou,Liang.,Wang,Linjing.,Yan,Zijun.,Deng,Xintan.,...&Wang,Gan.(2022).Conformal Growth of Cr2Te3on Bi2Te3Nanodots with a Topological Hall Effect.CRYSTAL GROWTH & DESIGN,22(1),140-147.
MLA
Chen,Junshu,et al."Conformal Growth of Cr2Te3on Bi2Te3Nanodots with a Topological Hall Effect".CRYSTAL GROWTH & DESIGN 22.1(2022):140-147.
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