题名 | Conformal Growth of Cr2Te3on Bi2Te3Nanodots with a Topological Hall Effect |
作者 | |
通讯作者 | He,Hongtao; Wang,Gan |
发表日期 | 2022
|
DOI | |
发表期刊 | |
ISSN | 1528-7483
|
EISSN | 1528-7505
|
卷号 | 22期号:1页码:140-147 |
摘要 | The conformal growth of a high-quality ferromagnet (Cr2Te3) on the nanostructures of a topological insulator (Bi2Te3) was realized via molecular beam epitaxy (MBE). A large topological Hall effect (THE) (∼400 nω cm) was unambiguously observed up to 95 K, which provided the evidence for the existence of magnetic spin textures such as magnetic skyrmions in this system. Detailed atomic structure characterizations revealed that black-phosphorus-like Bi nanosheets were embedded in the Cr2Te3 lattice and densely stacked above the Bi2Te3 nanodots. A nanoscale formation mechanism of the embedded Bi nanosheets was then proposed, demonstrating that the embedded Bi nanosheets were released from the Bi2Te3 nanodots in the van der Waals epitaxy process of Cr2Te3. Remarkably, as the large spin-orbital coupling of the embedded Bi nanosheets can stimulate the generation of magnetic skyrmions at the interfaces between them and Cr2Te3, the observed large THE may be attributed to the skyrmions on the densely stacked Bi nanosheets. In summary, our findings demonstrate the reaction between transition-metal Cr and Bi2Te3 in the conformal growth of Cr2Te3 on Bi2Te3 nanodots and provide an efficient and scalable technique to realize future spintronic devices. |
相关链接 | [Scopus记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 第一
; 通讯
|
WOS研究方向 | Chemistry
; Crystallography
; Materials Science
|
WOS类目 | Chemistry, Multidisciplinary
; Crystallography
; Materials Science, Multidisciplinary
|
WOS记录号 | WOS:000767204000016
|
出版者 | |
EI入藏号 | 20214911284605
|
EI主题词 | Molecular Beam Epitaxy
; Nanosheets
; Spin Hall Effect
; Tellurium Compounds
; Topological Insulators
; Topology
; Transition Metals
; Van Der Waals Forces
|
EI分类号 | Metallurgy And Metallography:531
; Magnetism: Basic Concepts And Phenomena:701.2
; Nanotechnology:761
; Physical Chemistry:801.4
; Combinatorial Mathematics, Includes Graph Theory, Set Theory:921.4
; Atomic And Molecular Physics:931.3
; Solid State Physics:933
; Crystal Growth:933.1.2
|
ESI学科分类 | CHEMISTRY
|
来源库 | Web of Science
|
引用统计 |
被引频次[WOS]:3
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/258183 |
专题 | 理学院_物理系 量子科学与工程研究院 公共分析测试中心 |
作者单位 | 1.Department of Physics,Shenzhen Institute for Quantum Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China 2.Department of Physics,National University of Singapore,Singapore,2 Science Drive 3,117551,Singapore 3.College of Physics Science and Technology,Yangzhou University,Yangzhou,225002,China 4.Core Research Facilities,Southern University of Science and Technology,Shenzhen,518055,China 5.Guangdong Provincial Key Laboratory of Quantum Science and Engineering,Shenzhen,518055,China |
第一作者单位 | 物理系; 量子科学与工程研究院 |
通讯作者单位 | 物理系; 量子科学与工程研究院 |
第一作者的第一单位 | 物理系; 量子科学与工程研究院 |
推荐引用方式 GB/T 7714 |
Chen,Junshu,Zhou,Liang,Wang,Linjing,et al. Conformal Growth of Cr2Te3on Bi2Te3Nanodots with a Topological Hall Effect[J]. CRYSTAL GROWTH & DESIGN,2022,22(1):140-147.
|
APA |
Chen,Junshu.,Zhou,Liang.,Wang,Linjing.,Yan,Zijun.,Deng,Xintan.,...&Wang,Gan.(2022).Conformal Growth of Cr2Te3on Bi2Te3Nanodots with a Topological Hall Effect.CRYSTAL GROWTH & DESIGN,22(1),140-147.
|
MLA |
Chen,Junshu,et al."Conformal Growth of Cr2Te3on Bi2Te3Nanodots with a Topological Hall Effect".CRYSTAL GROWTH & DESIGN 22.1(2022):140-147.
|
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
文章-何洪涛.pdf(4718KB) | -- | -- | 限制开放 | -- |
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