The size and temperature effect of ideality factor in GaN/InGaN multiple quantum wells micro-light-emitting diodes

Liu，Yibo1; Zhang，Ke1,2; Feng，Feng1; Chan，Ka Wah1,3; Yeung，Sze Yan1; Kwok，Hoi Sing1; Liu，Zhaojun1,2,3

2021-12-01

10.1002/jsid.1070

Journal of the Society for Information Display   影响因子和分区

1071-0922

1938-3657

In this paper, the GaN/InGaN multiple quantum wells (MQWs) micro-light-emitting diode (micro-LED) devices of different size with green light emission were fabricated. The ideality factor of micro-LED was discussed. For temperature-dependent electrical characterization, the current–voltage relationship within a temperature category of 303–573 K was measured. The contact resistance between electrodes and GaN was exhibited, and a favorable ohmic contact was achieved for p-electrode and p-GaN. Next, the temperature and size effect of ideality factor was demonstrated. All size devices showed an extremely low factor smaller than 1.9. In order to better evaluate the temperature dependence, the thermal characterization was performed with a constant current and voltage mode. The 80-μm device revealed a satisfactory temperature coefficient, namely, 1.92 mV/K at the forward voltage and 2.66 kA·K at the reverse bias. For temperature-dependent optical characterization, the irradiance and brightness from 303 to 453 K of 100 μm were demonstrated. Even at 453 K, the brightness is still favorable as 34,520 nits. Following this, the luminous efficiency droop with increasing injection current density was described and discussed.

diode ideality factor GaN/InGaN multiple quantum wells micro-light-emitting diodes size dependence temperature dependence

SCI ; EI

英语

通讯

WOS:000667492400001

20212710585406

Electrodes ; Gallium nitride ; Green manufacturing ; III-V semiconductors ; Light emitting diodes ; Luminance ; Ohmic contacts ; Power semiconductor diodes ; Temperature distribution

Thermodynamics:641.1 ; Semiconductor Devices and Integrated Circuits:714.2

2-s2.0-85120986510

Scopus

1.State Key Laboratory of Advanced Displays and Optoelectronics Technologies,Hong Kong University of Science and Technology,Hong Kong
2.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,China
3.Shenzhen Sitan Technology Co.,Ltd.,Shenzhen,China

Liu，Yibo,Zhang，Ke,Feng，Feng,et al. The size and temperature effect of ideality factor in GaN/InGaN multiple quantum wells micro-light-emitting diodes[J]. Journal of the Society for Information Display,2021,29(12):948-960.

Liu，Yibo.,Zhang，Ke.,Feng，Feng.,Chan，Ka Wah.,Yeung，Sze Yan.,...&Liu，Zhaojun.(2021).The size and temperature effect of ideality factor in GaN/InGaN multiple quantum wells micro-light-emitting diodes.Journal of the Society for Information Display,29(12),948-960.

Liu，Yibo,et al."The size and temperature effect of ideality factor in GaN/InGaN multiple quantum wells micro-light-emitting diodes".Journal of the Society for Information Display 29.12(2021):948-960.