Noncollinearity-modulated Electronic Properties of Monolayer CrI3

Ren, Lingling1,2; Liu, Qian1,2; Xu, Pengxiang1,2,3; Zhong, Zhicheng4,5; Yang, Li6,7; Yuan, Zhe1,2; Xia, Ke1,2,3,8,9

2019-05-15

10.1103/PhysRevApplied.11.054042

Physical Review Applied   影响因子和分区

2331-7019

Introducing noncollinear magnetization into a monolayer CrI3 is proposed to be an effective approach to modulate the local electronic properties of the two-dimensional (2D) magnetic material. Using first-principles calculation, we illustrate that both the conduction and valence bands in the monolayer CrI3 are lowered down by spin spiral states. The distinct electronic structure of the monolayer noncollinear CrI3 can be applied in nanoscale functional devices. As a proof of concept, we show that a magnetic domain wall can form a one-dimensional conducting channel in the 2D semiconductor via proper gating. This conducting channel is approximately 7 nm wide and has a carrier concentration of 10(13)-10(14) cm(-2).

SCI ; EI

英语

其他

Fundamental Research Funds for the Central Universities[2018EYT03]

Physics

Physics, Applied

WOS:000468234200003

AMER PHYSICAL SOC

20192106961502

Band structure ; Calculations ; Carrier concentration ; Chromium ; Domain walls ; Electronic properties ; Electronic structure ; Magnetic domains ; Magnetic materials ; Magnetization ; Monolayers

Chromium and Alloys:543.1 ; Electricity: Basic Concepts and Phenomena:701.1 ; Magnetism: Basic Concepts and Phenomena:701.2 ; Magnetic Materials:708.4 ; Mathematics:921 ; Solid State Physics:933

Web of Science

1.Beijing Normal Univ, Ctr Adv Quantum Studies, Beijing 100875, Peoples R China
2.Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China
3.Peng Cheng Lab, Ctr Quantum Comp, Shenzhen 518005, Peoples R China
4.Chinese Acad Sci, Key Lab Magnet Mat & Devices, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
5.Chinese Acad Sci, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
6.Washington Univ, Dept Phys, St Louis, MO 63130 USA
7.Washington Univ, Inst Mat Sci & Engn, St Louis, MO 63130 USA
8.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China
9.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China

Ren, Lingling,Liu, Qian,Xu, Pengxiang,et al. Noncollinearity-modulated Electronic Properties of Monolayer CrI3[J]. Physical Review Applied,2019,11(5).

Ren, Lingling.,Liu, Qian.,Xu, Pengxiang.,Zhong, Zhicheng.,Yang, Li.,...&Xia, Ke.(2019).Noncollinearity-modulated Electronic Properties of Monolayer CrI3.Physical Review Applied,11(5).

Ren, Lingling,et al."Noncollinearity-modulated Electronic Properties of Monolayer CrI3".Physical Review Applied 11.5(2019).