Effect of incident laser power and incorporating polariton effects in GaN microrods

Ghosh, Poulami1; Yu, Dapeng1,2; Huang, Mingyuan1,2

2019-05

10.1016/j.jlumin.2019.02.006

JOURNAL OF LUMINESCENCE   影响因子和分区

0022-2313

1872-7883

Optical property of GaN microrods was investigated by power dependent photoluminescence (PL). Two PL peak envelops were observed in near band edge region and this feature has been attributed to the exciton-photon coupling. Clear mode formation in PL spectrum was observed and modes were redshifted slightly with the increase in laser power for two microrods. Redshifting of PL peak envelops in near band edge region was huge in one microrod as compare to other microrods with the increase in laser power. This is attributed to both the electron-hole plasma effect and exciton-photon coupling which depends on the morphology. Modes in the defect related region were prominent than the modes in near band edge region at low laser power and with the increase in laser power, modes in the defect region disappears and modes in the near band edge region becomes more prominent. Cavity modes get guided in the cavity at higher power when the polariton formation takes place. Cavity modes are not guided at low power when modes are photonic.

Polaritons Exciton-photon coupling Photoluminescence Whispering gallery mode

SCI ; EI

英语

第一 ; 通讯

Shenzhen Municipal Committee of Science and Technology Innovation for fundamental research[JCYJ20160531190446212] ; Shenzhen Municipal Committee of Science and Technology Innovation for fundamental research[ZDSYS20170303165926217]

Optics

Optics

WOS:000460126200045

ELSEVIER SCIENCE BV

20190806518192

Defects ; Excitons ; Gallium nitride ; III-V semiconductors ; Phonons ; Photoluminescence ; Photons ; Red Shift ; Semiconductor quantum wells

Semiconductor Devices and Integrated Circuits:714.2 ; Waveguides:714.3 ; Light/Optics:741.1 ; Atomic and Molecular Physics:931.3 ; Materials Science:951

PHYSICS

Web of Science

1.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China
2.Southern Univ Sci & Technol, Shenzhen Key Lab Quantum Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China

Ghosh, Poulami,Yu, Dapeng,Huang, Mingyuan. Effect of incident laser power and incorporating polariton effects in GaN microrods[J]. JOURNAL OF LUMINESCENCE,2019,209:328-332.

Ghosh, Poulami,Yu, Dapeng,&Huang, Mingyuan.(2019).Effect of incident laser power and incorporating polariton effects in GaN microrods.JOURNAL OF LUMINESCENCE,209,328-332.

Ghosh, Poulami,et al."Effect of incident laser power and incorporating polariton effects in GaN microrods".JOURNAL OF LUMINESCENCE 209(2019):328-332.