On the impact of a metal-insulator-semiconductor structured n-electrode for AlGaN-based DUV LEDs

Shao, Hua1,2; Che, Jiamang1,2; Chu, Chunshuang1,2; Tian, Kangkai1,2; Zhang, Yonghui1,2; Sun, Xiaowei3; Zhang, Zi-Hui1,2

2021-12-20

10.1364/AO.446613

APPLIED OPTICS   影响因子和分区

1559-128X

2155-3165

In this work, a 280 nm AlGaN-based deep ultraviolet light-emitting diode (DUV LED) with a metal-insulator- semiconductor (MIS) structured n-electrode is fabricated and studied. The SiO2 insulator layer is adopted to form the MIS structure by using an atomic layer deposition system. After adopting the MIS-structured n-electrode, the SiO2 intermediate layer enables electron affinity for the contact metal to be higher than the conduction band of the n-AIGaN layer, which favors the electrons to be injected into the n-AlGaN layer by intraband tunneling rather than thermionic emission. Moreover, the thin SiO2 insulator can share the applied bias, which makes the n-AlGaN layer surface less depleted and thus further facilitates the electron injection. The improved electron injection capability at the metal-semiconductor interface helps reduce the contact resistance and increase electron concentration in the active region, which then improves external quantum efficiency and wall-plug efficiency for the proposed DUV LED. (C) 2021 Optica Publishing Group

SCI ; EI

英语

其他

National Natural Science Foundation of China[62074050] ; Natural Science Foundation of Hebei Province[F2020202030] ; State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology[EERI_PI2020008] ; Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Nanjing University[njuzds2021-005] ; Basic and Applied Basic Research Foundation of Guangdong Province[2019A1515111053]

Optics

Optics

WOS:000731837600028

OPTICAL SOC AMER

20220211454548

Atomic layer deposition ; Efficiency ; Electrodes ; Electron affinity ; Electron injection ; Electrons ; Gallium nitride ; III-V semiconductors ; Light emitting diodes ; Metals ; Silica ; Silicon ; Thermionic emission ; Wide band gap semiconductors

Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Chemistry:801 ; Inorganic Compounds:804.2 ; Coating Techniques:813.1 ; Production Engineering:913.1 ; Crystal Growth:933.1.2

PHYSICS

Web of Science

1.Hebei Univ Technol, Sch Elect & Informat Engn, State Key Lab Reliabil & Intelligence Elect Equip, Tianjin, Peoples R China
2.Key Lab Elect Mat & Devices Tianjin, 5340 Xiping Rd, Tianjin 300401, Peoples R China
3.South Univ Sci & Technol, Coll Engn, Dept Elect & Elect Engn, 1088 Xue Yuan Rd, Shenzhen 518055, Guangdong, Peoples R China

Shao, Hua,Che, Jiamang,Chu, Chunshuang,et al. On the impact of a metal-insulator-semiconductor structured n-electrode for AlGaN-based DUV LEDs[J]. APPLIED OPTICS,2021,60(36):11222-11226.

Shao, Hua.,Che, Jiamang.,Chu, Chunshuang.,Tian, Kangkai.,Zhang, Yonghui.,...&Zhang, Zi-Hui.(2021).On the impact of a metal-insulator-semiconductor structured n-electrode for AlGaN-based DUV LEDs.APPLIED OPTICS,60(36),11222-11226.

Shao, Hua,et al."On the impact of a metal-insulator-semiconductor structured n-electrode for AlGaN-based DUV LEDs".APPLIED OPTICS 60.36(2021):11222-11226.