题名 | A wafer-scale van der Waals dielectric made from an inorganic molecular crystal film |
作者 | |
通讯作者 | Zhai,Tianyou |
发表日期 | 2021-12-01
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DOI | |
发表期刊 | |
EISSN | 2520-1131
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卷号 | 4期号:12页码:906-913 |
摘要 | Van der Waals dielectrics, such as hexagonal boron nitride, are widely used to preserve the intrinsic properties of two-dimensional semiconductors in electronic devices. However, fabricating these materials on the wafer scale and integrating them with two-dimensional semiconductors is challenging because their synthesis typically requires mechanical exfoliation or vapour deposition processes. Here we show that a high-κ van der Waals dielectric can be created on wafer scales using an inorganic molecular crystal film of antimony trioxide (SbO) fabricated via thermal evaporation deposition. Monolayer molybdenum disulfide (MoS) field-effect transistors supported by this dielectric substrate exhibit enhanced electron mobility—from 26 cm V s to 145 cm V s—and reduced transfer-curve hysteresis compared with when using SiO substrate. MoS transistors directly gated by the SbO film can operate with a supply voltage of 0.8 V, on/off ratio of 10 and subthreshold swing of 64 mV dec at 300 K. |
相关链接 | [Scopus记录] |
收录类别 | |
语种 | 英语
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学校署名 | 其他
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WOS记录号 | WOS:000732547100016
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EI入藏号 | 20215211377014
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EI主题词 | Antimony compounds
; Field effect transistors
; Gate dielectrics
; III-V semiconductors
; Layered semiconductors
; Low-k dielectric
; Molecular crystals
; Molybdenum compounds
; Silica
; Silicon wafers
; Substrates
; Sulfur compounds
; Thermal evaporation
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EI分类号 | Dielectric Materials:708.1
; Semiconducting Materials:712.1
; Semiconductor Devices and Integrated Circuits:714.2
; Physical Chemistry:801.4
; Atomic and Molecular Physics:931.3
; Crystalline Solids:933.1
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Scopus记录号 | 2-s2.0-85121491984
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来源库 | Scopus
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引用统计 |
被引频次[WOS]:114
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/259987 |
专题 | 理学院_物理系 |
作者单位 | 1.State Key Laboratory of Materials Processing and Die and Mould Technology,School of Materials Science and Engineering,Huazhong University of Science and Technology,Wuhan,China 2.Nano and Heterogeneous Materials Center,School of Materials Science and Engineering,Nanjing University of Science and Technology,Nanjing,China 3.Department of Physics,Southern University of Science and Technology,Shenzhen,China 4.Key Laboratory of Optic-Electronic Information and Materials of Hebei Province,Institute of Life Science and Green Development,College of Physics Science and Technology,Hebei University,Baoding,China 5.Institutes of Physical Science and Information Technology,Anhui University,Hefei,China 6.Green Catalysis Center,College of Chemistry,Zhengzhou University,Zhengzhou,China |
推荐引用方式 GB/T 7714 |
Liu,Kailang,Jin,Bao,Han,Wei,et al. A wafer-scale van der Waals dielectric made from an inorganic molecular crystal film[J]. Nature Electronics,2021,4(12):906-913.
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APA |
Liu,Kailang.,Jin,Bao.,Han,Wei.,Chen,Xiang.,Gong,Penglai.,...&Zhai,Tianyou.(2021).A wafer-scale van der Waals dielectric made from an inorganic molecular crystal film.Nature Electronics,4(12),906-913.
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MLA |
Liu,Kailang,et al."A wafer-scale van der Waals dielectric made from an inorganic molecular crystal film".Nature Electronics 4.12(2021):906-913.
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条目包含的文件 | 条目无相关文件。 |
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