Raman investigation of layered ZrGeTe4 semiconductor

Gong, Wentao1; Li, Liang2,3; Gong, Penglai4; Zhou, Yulan1; Zhang, Zhitao5; Zhou, Weichang1; Wang, Weike1; Liu, Ziran1; Tang, Dongsheng1

2019-04-29

10.1063/1.5087778

APPLIED PHYSICS LETTERS   影响因子和分区

0003-6951

1077-3118

This work presents a systematic study of phonon modes in a ZrGeTe4 layered semiconductor by Raman spectroscopy. Ten Raman characteristic peaks were detected and determined by density functional perturbation theory calculations. All Raman mode shifts exhibit a linear temperature dependence. The first-order temperature coefficients (chi) of the ZrGeTe4 Raman mode are in the range of -0.0058 cm(-1)/K to -0.01831 cm(-1)/K. Moreover, we demonstrate the strong anisotropic Raman response for linearly polarized excitation. The intensities of the observed Raman modes show periodic variation with the sample rotating under the angle-dependent and polarized Raman spectroscopy measurements, showing the high anisotropy of ZrGeTe4. Our results prove that ZrGeTe4 is a highly in-plane anisotropic 2D semiconductor, suggesting its potential application in nanoelectronic devices. Published under license by AIP Publishing.

SCI ; EI

英语

NI期刊

其他

China Postdoctoral Science Foundation[2017M621050]

Physics

Physics, Applied

WOS:000466889100012

AMER INST PHYSICS

20191906893455

Anisotropy ; Density functional theory ; Germanium compounds ; Layered semiconductors ; Perturbation techniques ; Raman spectroscopy ; Semiconducting tellurium compounds ; Semiconductor devices ; Temperature distribution ; Zirconium compounds

Thermodynamics:641.1 ; Compound Semiconducting Materials:712.1.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Mathematics:921 ; Classical Physics; Quantum Theory; Relativity:931

PHYSICS

Web of Science

1.Hunan Normal Univ, Synerget Innovat Ctr Quantum Effects & Applicat, Key Lab Low Dimens Quantum Struct & Quantum Contr, Minist Educ,Coll Phys & Elect Sci, Changsha 410081, Hunan, Peoples R China
2.Anhui Univ, Inst Phys Sci, Hefei 230601, Anhui, Peoples R China
3.Anhui Univ, Inst Informat Technol, Hefei 230601, Anhui, Peoples R China
4.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
5.Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Anhui, Peoples R China

Gong, Wentao,Li, Liang,Gong, Penglai,et al. Raman investigation of layered ZrGeTe4 semiconductor[J]. APPLIED PHYSICS LETTERS,2019,114(17).

Gong, Wentao.,Li, Liang.,Gong, Penglai.,Zhou, Yulan.,Zhang, Zhitao.,...&Tang, Dongsheng.(2019).Raman investigation of layered ZrGeTe4 semiconductor.APPLIED PHYSICS LETTERS,114(17).

Gong, Wentao,et al."Raman investigation of layered ZrGeTe4 semiconductor".APPLIED PHYSICS LETTERS 114.17(2019).