Insights into the unusual semiconducting behavior in low-dimensional boron

Xu, Shao-Gang1,2,3,4; Li, Xiao-Tian3; Zhao, Yu-Jun3; Xu, Wang-Ping1,2; Liao, Ji-Hai3,5; Zhang, Xiu-Wen4; Xu, Hu1,2; Yang, Xiao-Bao3

2019-04-28

10.1039/c9nr00301k

Nanoscale   影响因子和分区

2040-3364

2040-3372

Elementary semiconductors are rare and attractive, especially for low-dimensional materials. Unfortunately, most of the boron nanostructures have been found to be metallic, despite their typical semiconducting bulk structure. Herein, we propose a general recipe to realize low-dimensional semiconducting boron. This unusual semiconducting behavior is attributed to charge transfer and electron localization, induced by symmetry breaking that divides boron atoms into cations and anions. In addition, it is feasible to accomplish band gap engineering by rationally designing various structures. Importantly, the low-dimensional semiconducting boron allotropes are predicted to be an excellent solar-cell material with a power conversion efficiency of up to 22%, paving the way for their promising optoelectronic application.

SCI ; EI

英语

第一 ; 通讯

Science, Technology and Innovation Commission of Shenzhen Municipality[ZDSYS20170303165926217]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied

WOS:000467776400034

ROYAL SOC CHEMISTRY

20192106943597

Charge transfer ; Semiconducting boron

Single Element Semiconducting Materials:712.1.1 ; Chemical Reactions:802.2

Web of Science

1.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
2.Southern Univ Sci & Technol, Shenzhen Key Lab Quantum Sci & Engn, Shenzhen 518055, Peoples R China
3.South China Univ Technol, Dept Phys, Guangzhou 510640, Guangdong, Peoples R China
4.Shenzhen Univ, Coll Elect Sci & Rchnol, Shenzhen 518060, Peoples R China
5.Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Hebei, Peoples R China

Xu, Shao-Gang,Li, Xiao-Tian,Zhao, Yu-Jun,et al. Insights into the unusual semiconducting behavior in low-dimensional boron[J]. Nanoscale,2019,11(16):7866-7874.

Xu, Shao-Gang.,Li, Xiao-Tian.,Zhao, Yu-Jun.,Xu, Wang-Ping.,Liao, Ji-Hai.,...&Yang, Xiao-Bao.(2019).Insights into the unusual semiconducting behavior in low-dimensional boron.Nanoscale,11(16),7866-7874.

Xu, Shao-Gang,et al."Insights into the unusual semiconducting behavior in low-dimensional boron".Nanoscale 11.16(2019):7866-7874.