Write once read many times resistance switching memory based on all-inorganic perovskite CsPbBr3 quantum dot

Chen, Zhiliang1,2; Zhang, Yating1,2; Yu, Yu1,2; Che, Yongli1; Jin, Lufan1; Li, Yifan1; Li, Qingyan1; Li, Tengteng1; Dai, Haitao3; Yao, Jianquan1

2019-04

10.1016/j.optmat.2019.01.069

OPTICAL MATERIALS   影响因子和分区

0925-3467

1873-1252

Write Once Read Many (WORM) Memory, as one of the most important nonvolatile memory type, has widespread used in a variety of permanent storage applications in the Big Data age. As an excellent material, CsPbBr3 quantum dots have widely used in a lot of photoelectric devices, but CsPbBr3 quantum dots based memory device remain to be studied. In this work a WORM memory device based on CsPbBr3 quantum dots is demonstrated. The CsPbBr3 QDs based WORM shows great reproducibility, good data retention ability, irreversible electrical transition from the high resistance state (HRS) or OFF state to the low resistance state (LRS) or ON state and the resistance ratio (ON/OFF) can reach almost 10(4). Additionally, the device exhibits high performances under low power consumption low reading voltage (-0.5V) and writing voltage (-1.1V). To study the CsPbBr3 QDs based WORM provides an opportunity to develop the next generation high-performance and stable WORM devices.

Semiconductor CsPbBr3 quantum dots Resistive switching memory Electronic material

SCI ; EI

英语

第一 ; 通讯

Basic Research Program of Shenzhen[JCYJ20170412154447469]

Materials Science ; Optics

Materials Science, Multidisciplinary ; Optics

WOS:000470938600020

ELSEVIER SCIENCE BV

20191006599902

Bromine compounds ; Lead compounds ; Nanocrystals ; Nonvolatile storage ; Perovskite ; Semiconductor materials

Minerals:482.2 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Data Storage, Equipment and Techniques:722.1 ; Nanotechnology:761

MATERIALS SCIENCE

Web of Science

1.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
2.Tianjin Univ, Sch Precis Instruments & Optoelect Engn, Minist Educ, Key Lab Optoelect Informat Technol, Tianjin 300072, Peoples R China
3.Tianjin Univ, Sch Sci, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R China

Chen, Zhiliang,Zhang, Yating,Yu, Yu,et al. Write once read many times resistance switching memory based on all-inorganic perovskite CsPbBr3 quantum dot[J]. OPTICAL MATERIALS,2019,90:123-126.

Chen, Zhiliang.,Zhang, Yating.,Yu, Yu.,Che, Yongli.,Jin, Lufan.,...&Yao, Jianquan.(2019).Write once read many times resistance switching memory based on all-inorganic perovskite CsPbBr3 quantum dot.OPTICAL MATERIALS,90,123-126.

Chen, Zhiliang,et al."Write once read many times resistance switching memory based on all-inorganic perovskite CsPbBr3 quantum dot".OPTICAL MATERIALS 90(2019):123-126.