Phase Identification and Strong Second Harmonic Generation in Pure epsilon-InSe and Its Alloys

Hao, Qiaoyan1; Yi, Huan1; Su, Huimin2; Wei, Bin3; Wang, Zhuo1; Lao, Zhezhu4; Chai, Yang5; Wang, Zhongchang3; Jin, Chuanhong4; Dai, Junfeng2; Zhang, Wenjing1

2019-04

10.1021/acs.nanolett.9b00487

NANO LETTERS   影响因子和分区

1530-6984

1530-6992

Two-dimensional material indium selenide (InSe) has offered a new platform for fundamental research in virtue of its emerging fascinating properties. Unlike 2H-phase transition-metal dichalcogenides (TMDs), epsilon phase InSe with a hexagonal unit cell possesses broken inversion symmetry in all the layer numbers, and predicted to have a strong second harmonic generation (SHG) effect. In this work, we find that the as-prepared pure InSe, alloyed InSe1-xTex and InSe1-xSx (x = 0.1 and 0.2) are epsilon phase structures and exhibit excellent SHG performance from few-layer to bulk-like dimension. This high SHG efficiency is attributed to the non-centrosymmetric crystal structure of the epsilon-InSe system, which has been clearly verified by aberration-corrected scanning transmission electron microscopy (STEM) images. The experimental results show that the SHG intensities from multilayer pure epsilon-InSe and alloyed InSe0.9Te0.1 and InSe1-xSx (x = 0.1 and 0.2) are around 1-2 orders of magnitude higher than of the monolayer TMD systems and even superior to that of GaSe with the same thickness. The estimated nonlinear susceptibility chi((2)) of epsilon-InSe is larger than that of epsilon-GaSe and monolayer TMDs. Our study provides first-hand information about the phase identification of epsilon-InSe and indicates an excellent candidate for nonlinear optical (NLO) applications as well as the possibility of engineering SHG response by alloying.

Phase indium selenide second harmonic generation alloy nonlinear

SCI ; EI

英语

NI期刊

其他

Natural Science Foundation of SZU[000050]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:000464769100060

AMER CHEMICAL SOC

20191106638385

Alloying ; Crystal structure ; Gallium compounds ; Harmonic analysis ; Harmonic generation ; High resolution transmission electron microscopy ; Layered semiconductors ; Monolayers ; Nonlinear optics ; Scanning electron microscopy ; Transition metals

Metallurgy and Metallography:531 ; Metallurgy:531.1 ; Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Nonlinear Optics:741.1.1 ; Optical Devices and Systems:741.3 ; Numerical Methods:921.6 ; Crystal Lattice:933.1.1

MATERIALS SCIENCE

Web of Science

1.Shenzhen Univ, Int Collaborat Lab 2D Mat Optoelect Sci & Technol, Shenzhen 518060, Peoples R China
2.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
3.Int Iberian Nanotechnol Lab, Mestre Jose Veiga, P-4715330 Braga, Portugal
4.Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
5.Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong 999077, Peoples R China

Hao, Qiaoyan,Yi, Huan,Su, Huimin,et al. Phase Identification and Strong Second Harmonic Generation in Pure epsilon-InSe and Its Alloys[J]. NANO LETTERS,2019,19(4):2634-2640.

Hao, Qiaoyan.,Yi, Huan.,Su, Huimin.,Wei, Bin.,Wang, Zhuo.,...&Zhang, Wenjing.(2019).Phase Identification and Strong Second Harmonic Generation in Pure epsilon-InSe and Its Alloys.NANO LETTERS,19(4),2634-2640.

Hao, Qiaoyan,et al."Phase Identification and Strong Second Harmonic Generation in Pure epsilon-InSe and Its Alloys".NANO LETTERS 19.4(2019):2634-2640.