All-Inorganic Quantum-Dot Light-Emitting Diodes with Reduced Exciton Quenching by a MgO Decorated Inorganic Hole Transport Layer

Jiang, Yibin1; Jiang, Le2; Yeung, Fion Sze Yan1; Xu, Ping2; Chen, Shuming3; Kwok, Hoi-Sing1; Li, Guijun2

2019-03-27

10.1021/acsami.9b01742

ACS Applied Materials & Interfaces   影响因子和分区

1944-8244

1944-8252

Here, wide-bandgap magnesium oxide (MgO) is employed as a decorator for the nickel oxide (NiO)(x) hole transport layer (HTL), by means of a bulk dopant as well as a surface modifier. QLEDs with Ni0.88Mg0.12Ox serving as the HTL achieve an similar to 19.5% efficiency improvement compared to devices using pristine NiOx. Further inserting an ultrathin MgO layer between the Ni0.88Mg0.12Ox and QDs to separate the accumulated charges from excitons goes on boosting the peak efficiency by another similar to 35%. Finally, a maximum brightness over 40 000 cd/m(2) at 10 V is obtained, which is the highest among the reported values.

all-inorganic quantum-dot light-emitting diodes electroluminescence quenching magnesium oxide inorganic hole transport layer displays

SCI ; EI

英语

其他

State Key Laboratory of Advanced Displays and Optoelectronics Technologies[ITC-PSKL12EG02]

Science & Technology - Other Topics ; Materials Science

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000462950600005

AMER CHEMICAL SOC

20191306710112

Display devices ; Efficiency ; Excitons ; Hole mobility ; Light ; Luminance ; Magnesia ; Nanocrystals ; Nickel oxide ; Quantum chemistry ; Quenching ; Semiconductor quantum dots

Heat Treatment Processes:537.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Computer Peripheral Equipment:722.2 ; Light/Optics:741.1 ; Nanotechnology:761 ; Physical Chemistry:801.4 ; Inorganic Compounds:804.2 ; Production Engineering:913.1

Web of Science

1.Hong Kong Univ Sci & Technol, State Key Lab Adv Displays & Optoelect, Kowloon, Clear Water Bay, Hong Kong, Peoples R China
2.Shenzhen Univ, Coll Elect Sci & Technol, Shenzhen 518060, Peoples R China
3.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China

Jiang, Yibin,Jiang, Le,Yeung, Fion Sze Yan,et al. All-Inorganic Quantum-Dot Light-Emitting Diodes with Reduced Exciton Quenching by a MgO Decorated Inorganic Hole Transport Layer[J]. ACS Applied Materials & Interfaces,2019,11(12):11119-11124.

Jiang, Yibin.,Jiang, Le.,Yeung, Fion Sze Yan.,Xu, Ping.,Chen, Shuming.,...&Li, Guijun.(2019).All-Inorganic Quantum-Dot Light-Emitting Diodes with Reduced Exciton Quenching by a MgO Decorated Inorganic Hole Transport Layer.ACS Applied Materials & Interfaces,11(12),11119-11124.

Jiang, Yibin,et al."All-Inorganic Quantum-Dot Light-Emitting Diodes with Reduced Exciton Quenching by a MgO Decorated Inorganic Hole Transport Layer".ACS Applied Materials & Interfaces 11.12(2019):11119-11124.