Sub-10 nm stable graphene quantum dots embedded in hexagonal boron nitride

Chen, Dongxue1,2,3,4; Qiao, Ruixi3; Xu, Xiaozhi3; Dong, Weikang5; Wang, Li3,6; Ma, Ruisong6; Liu, Can3; Zhang, Zhihong3; Wu, Muhong3; Liu, Lei7; Bao, Lihong6; Wang, Hui-Tian4; Gao, Peng5; Liu, Kaihui3; Yu, Dapeng1,2,8

2019-03-14

10.1039/c9nr00412b

Nanoscale   影响因子和分区

2040-3364

2040-3372

Graphene quantum dots (GQDs), a zero-dimensional material system with distinct physical properties, have great potential in the applications of photonics, electronics, photovoltaics, and quantum information. In particular, GQDs are promising candidates for quantum computing. In principle, a sub-10 nm size is required for GQDs to present the intrinsic quantum properties. However, with such an extreme size, GQDs have predominant edges with lots of active dangling bonds and thus are not stable. Satisfying the demands of both quantum size and stability is therefore of great challenge in the design of GQDs. Herein we demonstrate the fabrication of sub-10 nm stable GQD arrays by embedding GQDs into large-bandgap hexagonal boron nitride (h-BN). With this method, the dangling bonds of GQDs were passivated by the surrounding h-BN lattice to ensure high stability, meanwhile maintaining their intrinsic quantum properties. The sub-10 nm nanopore array was first milled in h-BN using an advanced high-resolution helium ion microscope and then GQDs were directly grown in them through the chemical vapour deposition process. Stability analysis proved that the embedded GQDs show negligible property decay after baking at 100 degrees C in air for 100 days. The success in preparing sub-10 nm stable GQD arrays will promote the physical exploration and potential applications of this unique zero-dimensional in-plane quantum material.

SCI ; EI

英语

第一 ; 通讯

China Postdoctoral Science Foundation[2017M611148] ; China Postdoctoral Science Foundation[2018M630017]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied

WOS:000465410200009

ROYAL SOC CHEMISTRY

20191106627368

Boron nitride ; Chemical vapor deposition ; Dangling bonds ; III-V semiconductors ; Nanocrystals ; Nitrides ; Quantum computers ; Quantum optics ; Semiconductor quantum dots

Semiconductor Devices and Integrated Circuits:714.2 ; Computer Systems and Equipment:722 ; Light/Optics:741.1 ; Nanotechnology:761 ; Physical Chemistry:801.4 ; Chemical Reactions:802.2 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2

Web of Science

1.Southern Univ Sci & Technol, Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China
2.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
3.Peking Univ, Sch Phys, Collaborat Innovat Ctr Quantum Matter, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
4.Nankai Univ, Sch Phys, Tianjin 300071, Peoples R China
5.Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China
6.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
7.Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China
8.Shenzhen Key Lab Quantum Sci & Engn, Shenzhen 518055, Peoples R China

Chen, Dongxue,Qiao, Ruixi,Xu, Xiaozhi,et al. Sub-10 nm stable graphene quantum dots embedded in hexagonal boron nitride[J]. Nanoscale,2019,11(10):4226-4230.

Chen, Dongxue.,Qiao, Ruixi.,Xu, Xiaozhi.,Dong, Weikang.,Wang, Li.,...&Yu, Dapeng.(2019).Sub-10 nm stable graphene quantum dots embedded in hexagonal boron nitride.Nanoscale,11(10),4226-4230.

Chen, Dongxue,et al."Sub-10 nm stable graphene quantum dots embedded in hexagonal boron nitride".Nanoscale 11.10(2019):4226-4230.