Bright Mid-Infrared Photoluminescence from Thin-Film Black Phosphorus

Chen, Chen1; Chen, Feng1,5; Chen, Xiaolong1,6; Deng, Bingchen1; Eng, Brendan2; Jung, Daehwan3,7; Guo, Qiushi1; Yuan, Shaofan1; Watanabe, Kenji4; Taniguchi, Takashi4; Lee, Minjoo L.2; Xia, Fengnian1

2019-03

10.1021/acs.nanolett.8b04041

NANO LETTERS   影响因子和分区

1530-6984

1530-6992

Recently rediscovered layered black phosphoms (BP) provides rich opportunities for investigations of device physics and applications. The band gap of BP is widely tunable by its layer number and a vertical electric field, covering a wide electromagnetic spectral range from visible to mid-infrared. Despite much progress in BP optoelectronics, the fundamental photoluminescence (PL) properties of thin-film BP in mid-infrared have rarely been investigated. Here, we report bright PL emission from thin-film BP (with thickness of 4.5 to 46 nm) from 80 to 300 K. The PL measurements indicate a band gap of 0.308 +/- 0.003 eV in 46 nm thick BP at 80 K, and it increases monotonically to 0.334 +/- 0.003 eV at 300 K. Such an anomalous blueshift agrees with the previous theoretical and photoconductivity spectroscopy results. However, the observed blueshift of 26 meV from 80 to 300 K is about 60% of the previously reported value. Most importantly, we show that the PL emission intensity from thin-film BP is only a few times weaker than that of an indium arsenide (InAs) multiple quantum well (MQW) structure grown by molecular beam epitaxy. Finally, we report the thickness-dependent PL spectra in thin-film BP in mid-infrared regime. Our work reveals the mid-infrared light emission properties of thin-film BP, suggesting its promising future in tunable mid-infrared light emitting and lasing applications.

Black phosphorus photoluminescence tunability band gap mid-infrared anomalous blueshift

SCI ; EI

英语

NI期刊

其他

CREST, JST[JPMJCR15F3]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:000461537600010

AMER CHEMICAL SOC

20191006593480

Blue shift ; Electric fields ; Energy gap ; Film thickness ; III-V semiconductors ; Indium arsenide ; Infrared devices ; Molecular beam epitaxy ; Phosphorus ; Photoluminescence ; Semiconductor quantum wells

Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2 ; Atomic and Molecular Physics:931.3

MATERIALS SCIENCE

Web of Science

1.Yale Univ, Dept Elect Engn, New Haven, CT 06511 USA
2.Univ Illinois, Dept Elect & Comp Engn, Champaign, IL 61801 USA
3.Univ Calif Santa Barbara, Inst Energy Efficiency, Santa Barbara, CA 93106 USA
4.Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
5.Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
6.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
7.Korea Inst Sci & Technol, Ctr Optoelect Mat & Devices, Seoul 02792, South Korea

Chen, Chen,Chen, Feng,Chen, Xiaolong,et al. Bright Mid-Infrared Photoluminescence from Thin-Film Black Phosphorus[J]. NANO LETTERS,2019,19(3):1488-1493.

Chen, Chen.,Chen, Feng.,Chen, Xiaolong.,Deng, Bingchen.,Eng, Brendan.,...&Xia, Fengnian.(2019).Bright Mid-Infrared Photoluminescence from Thin-Film Black Phosphorus.NANO LETTERS,19(3),1488-1493.

Chen, Chen,et al."Bright Mid-Infrared Photoluminescence from Thin-Film Black Phosphorus".NANO LETTERS 19.3(2019):1488-1493.