题名 | Improving blue quantum dot light-emitting diodes by a lithium fluoride interfacial layer |
作者 | |
通讯作者 | Kang, Bonan; Sun, Xiao Wei |
发表日期 | 2019-02-18
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DOI | |
发表期刊 | |
ISSN | 0003-6951
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EISSN | 1077-3118
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卷号 | 114期号:7 |
摘要 | Unlike green and red quantum dot light-emitting diodes (QLEDs), electron injection is not sufficient for blue QLEDs due to a higher potential barrier at the quantum dot (QD)/ZnO interface. In this work, a lithium fluoride (LiF) interlayer is inserted between ZnO and the quantum dot layer to improve the efficiency and stability of blue QLEDs. The LiF interfacial layer facilitates electron injection into QDs through the electron tunneling effect and suppresses the exciton quenching at the QD/ZnO interface. As a result, the blue QLED devices show the maximum external quantum efficiency and current efficiency of 9.8% and 7.9 cd A(-1), respectively, which are 1.45 times and 1.39 times, respectively, higher than those of control devices. The operational lifetime of devices is also improved by two times. Our works indicate that interface engineering is an effective method for high efficiency and stable blue QLEDs. Published under license by AIP Publishing. |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
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重要成果 | NI期刊
|
学校署名 | 通讯
|
资助项目 | Shenzhen Innovation Project[JCYJ20160301113356947]
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WOS研究方向 | Physics
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WOS类目 | Physics, Applied
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WOS记录号 | WOS:000459554300001
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出版者 | |
EI入藏号 | 20190906550728
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EI主题词 | Efficiency
; Electron injection
; Electron tunneling
; Fluorine compounds
; II-VI semiconductors
; Lithium Fluoride
; Nanocrystals
; Organic light emitting diodes (OLED)
; Semiconductor quantum dots
; Zinc oxide
|
EI分类号 | Semiconductor Devices and Integrated Circuits:714.2
; Nanotechnology:761
; Inorganic Compounds:804.2
; Production Engineering:913.1
; Quantum Theory; Quantum Mechanics:931.4
|
ESI学科分类 | PHYSICS
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来源库 | Web of Science
|
引用统计 |
被引频次[WOS]:39
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/26410 |
专题 | 工学院_电子与电气工程系 |
作者单位 | 1.Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, 2699 Qianjin St, Changchun 130012, Jilin, Peoples R China 2.Southern Univ Sci & Technol, Shenzhen Key Lab Adv Quantum Dot Displays, Guangdong Univ Key Lab Adv Quantum Dot Displays &, Shenzhen 518055, Peoples R China 3.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China 4.Shenzhen Planck Innovat Technol Pte Ltd, Ganli 6th Rd, Shenzhen 518112, Peoples R China |
第一作者单位 | 南方科技大学; 电子与电气工程系 |
通讯作者单位 | 南方科技大学; 电子与电气工程系 |
推荐引用方式 GB/T 7714 |
Qu, Xiangwei,Zhang, Nan,Cai, Rui,et al. Improving blue quantum dot light-emitting diodes by a lithium fluoride interfacial layer[J]. APPLIED PHYSICS LETTERS,2019,114(7).
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APA |
Qu, Xiangwei.,Zhang, Nan.,Cai, Rui.,Kang, Bonan.,Chen, Shuming.,...&Sun, Xiao Wei.(2019).Improving blue quantum dot light-emitting diodes by a lithium fluoride interfacial layer.APPLIED PHYSICS LETTERS,114(7).
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MLA |
Qu, Xiangwei,et al."Improving blue quantum dot light-emitting diodes by a lithium fluoride interfacial layer".APPLIED PHYSICS LETTERS 114.7(2019).
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条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
Qu-2019-Improving bl(1776KB) | -- | -- | 限制开放 | -- |
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