题名 | p-Type Near-Infrared Transparent Delafossite Thin Films with Ultrahigh Conductivity |
作者 | |
通讯作者 | Zheng, Jinxing; Wei, Renhuai; Zhu, Xuebin |
发表日期 | 2022
|
DOI | |
发表期刊 | |
ISSN | 2195-1071
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卷号 | 10 |
摘要 | Design and implementation of efficient p-type transparent conducting (TC) oxides with excellent performance are the global material challenge. The strategy of "chemical modulation of the valence band" triggers the enthusiasm for p-type TC delafossite CuMO2. However, the low conductivity of previous CuMO2 films obstructs the development of delafossite-based electronics. Herein, a new p-type 4d transition metal Rh-based CuRhO2 film with large-size is first designed and fabricated by a facile solution method. Room-temperature conductivity as high as 735 S cm(-1) is achieved by substituting 10%Mg in Rh sites. Additionally, the acceptor-doped CuRhO2 films exhibit high near-infrared transmittance of 85-60% with low room-temperature sheet resistance of 4.28-0.18 k omega sq(-1). Furthermore, the electronic structure, electrical transport mechanism, and intra-band excitation feature for the CuRhO2 film are unveiled. The theoretical and experimental results make a great advance in p-type TC films and will pave a promising blueprint for future multifunctional opto-electronic devices. |
关键词 | |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 其他
|
资助项目 | National Natural Science Foundation of China[11604337,11904154,11804126]
; Key Lab of Photovoltaic and Energy Conservation Materials, Chinese Academy of Sciences[PECL2019KF011]
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WOS研究方向 | Materials Science
; Optics
|
WOS类目 | Materials Science, Multidisciplinary
; Optics
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WOS记录号 | WOS:000737076100001
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出版者 | |
EI入藏号 | 20220111427843
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EI主题词 | Electronic structure
; Infrared devices
; Optoelectronic devices
; Rhodium compounds
; Thin films
; Transition metals
|
EI分类号 | Metallurgy and Metallography:531
; Optical Devices and Systems:741.3
|
来源库 | Web of Science
|
引用统计 |
被引频次[WOS]:5
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/264230 |
专题 | 理学院_物理系 |
作者单位 | 1.Chinese Acad Sci, HFIPS, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 2.Univ Sci & Technol China, Hefei 230026, Peoples R China 3.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China 4.Chinese Acad Sci, HFIPS, Inst Plasma Phys, Hefei 230031, Peoples R China 5.Jiangsu Univ Sci & Technol, Sch Sci, Zhenjiang 212003, Jiangsu, Peoples R China 6.Chinese Acad Sci, HFIPS, High Magnet Field Lab, Hefei 230031, Peoples R China 7.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China |
推荐引用方式 GB/T 7714 |
Li, Chenhui,Gong, Penglai,Zheng, Jinxing,et al. p-Type Near-Infrared Transparent Delafossite Thin Films with Ultrahigh Conductivity[J]. Advanced Optical Materials,2022,10.
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APA |
Li, Chenhui.,Gong, Penglai.,Zheng, Jinxing.,Zhao, Minglin.,Wei, Renhuai.,...&Sun, Yuping.(2022).p-Type Near-Infrared Transparent Delafossite Thin Films with Ultrahigh Conductivity.Advanced Optical Materials,10.
|
MLA |
Li, Chenhui,et al."p-Type Near-Infrared Transparent Delafossite Thin Films with Ultrahigh Conductivity".Advanced Optical Materials 10(2022).
|
条目包含的文件 | 条目无相关文件。 |
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