GaP-ZnS Multilayer Films: Visible-Light Photoelectrodes by Interface Engineering

Park, Collin K.1; Gharavi, Paria S. M.1; Kurnia, Fran1,6; Zhang, Qi1; Toe, Cui Ying2; Al-Farsi, Mohammed1; Allan, Neil L.4; Yao, Yin3; Xie, Lin5; He, Jiaqing5; Ng, Yun Hau2; Valanoor, Nagarajan1; Hart, Judy N.1

2019-02-14

10.1021/acs.jpcc.8b10797

Journal of Physical Chemistry C   影响因子和分区

1932-7447

In the field of solar water splitting, searching for and modifying bulk compositions have been the conventional approaches to enhancing visible-light activity. In this work, manipulation of heterointerfaces in ZnS-GaP multi layer films is demonstrated as a successful alternative approach to achieving visible-light-active photoelectrodes. The photo current measured under visible light increases with the increasing number of interfaces for ZnS-GaP multilayer films with the same total thickness, indicating it to be a predominantly interface-driven effect. The activity extends to long wavelengths (650 nm), much longer than those expected for pure ZnS and also longer than those previously reported for GaP. Density functional theory calculations of ZnS-GaP multilayers predict the presence of electronic states associated with atoms at the interfaces between ZnS and GaP that are different from those found within the layers away from the interfaces; these states, formed due to unique bonding environments found at the interfaces, lead to a lowering of the band gap and hence the observed visible-light activity. The presence of these electronic states attributed to the interfaces is confirmed by depth-resolved X-ray photoelectron spectroscopy. Thus, we show that interface engineering is a promising route for overcoming common deficiencies of individual bulk materials caused by both wide band gaps and indirect band gaps and hence enhancing visible-light absorption and photoelectrochemical performance.

SCI ; EI

英语

其他

Science, Technology and Innovation Commission of Shenzhen Municipality[KQTD2016022619565991]

Chemistry ; Science & Technology - Other Topics ; Materials Science

Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000459223200010

AMER CHEMICAL SOC

20190706495816

Chemical bonds ; Density functional theory ; Electronic states ; Energy gap ; Gallium phosphide ; II-VI semiconductors ; III-V semiconductors ; Interface states ; Light ; Light absorption ; Multilayer films ; Multilayers ; Wide band gap semiconductors ; X ray photoelectron spectroscopy ; Zinc sulfide

Light/Optics:741.1 ; Physical Chemistry:801.4 ; Inorganic Compounds:804.2 ; Classical Physics; Quantum Theory; Relativity:931 ; High Energy Physics; Nuclear Physics; Plasma Physics:932 ; Electronic Structure of Solids:933.3

Web of Science

1.UNSW Sydney, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
2.UNSW Sydney, Sch Chem Engn, Particles & Catalysis Res Grp, Sydney, NSW 2052, Australia
3.UNSW Sydney, Mark Wainwright Analyt Ctr, Electron Microscope Unit, Sydney, NSW 2052, Australia
4.Univ Bristol, Sch Chem, Bristol BS8 1TS, Avon, England
5.Southern Univ Sci & Technol SUSTech, Dept Phys, Shenzhen 518055, Peoples R China
6.Queens Univ Belfast, Sch Math & Phys, Ctr Nanostruct Media, Belfast BT7 1NN, Antrim, North Ireland

Park, Collin K.,Gharavi, Paria S. M.,Kurnia, Fran,et al. GaP-ZnS Multilayer Films: Visible-Light Photoelectrodes by Interface Engineering[J]. Journal of Physical Chemistry C,2019,123(6):3336-3342.

Park, Collin K..,Gharavi, Paria S. M..,Kurnia, Fran.,Zhang, Qi.,Toe, Cui Ying.,...&Hart, Judy N..(2019).GaP-ZnS Multilayer Films: Visible-Light Photoelectrodes by Interface Engineering.Journal of Physical Chemistry C,123(6),3336-3342.

Park, Collin K.,et al."GaP-ZnS Multilayer Films: Visible-Light Photoelectrodes by Interface Engineering".Journal of Physical Chemistry C 123.6(2019):3336-3342.