南方科技大学知识苑(SUSTech KC): Efficient and Stable Quantum-Dot Light-Emitting Diodes Enabled by Tin Oxide Multifunctional Electron Transport Layer

题名	Efficient and Stable Quantum-Dot Light-Emitting Diodes Enabled by Tin Oxide Multifunctional Electron Transport Layer
作者	Chen, Zinan1 ; Chen, Shuming1,2
通讯作者	Chen, Shuming
发表日期	2022
DOI	10.1002/adom.202102404
发表期刊	Advanced Optical Materials 影响因子和分区
ISSN	2195-1071
摘要	Zinc oxide (ZnO) based nanoparticles (NPs) are the most commonly used electron transport layer (ETL) materials in quantum dot light-emitting diodes (QLEDs). However, numerous defects, severe quenching, and poor stability of ZnO NPs limit the commercialization of QLEDs. Herein, tin oxide (SnO2) NPs are prepared as a substitute to ZnO. The obtained SnO2 NPs exhibit high conductivity, good transparency, and excellent stability, thus enabling them to be applied as multifunctional ETLs for various structured QLEDs, e.g., 1) as a phase tuning layer to tune the microcavity effect in inverted QLEDs, 2) as a thick protection layer to improve the stability of noninverted QLEDs, 3) as a sputtering buffer layer to protect the functional layers from the ion bombardment damage in transparent QLEDs, and 4) as an internal light extraction layer to enhance the light coupling efficiency of top-emitting QLEDs. With the multifunctional SnO2 ETL, the resultant QLEDs are highly efficient (external quantum efficiency of 27.6%) and stable (half lifetime of 323 h at 4,459 cd m(-2)), which are comparable and even better than ZnMgO based devices. The results suggest that SnO2 is a promising ETL material for realizing efficient and stable QLEDs.
关键词	electron transport layer light-emitting diodes quantum-dot LEDs tin oxide zinc oxide
相关链接	[来源记录]
收录类别	SCI ; EI
语种	英语
学校署名	第一 ; 通讯
资助项目	National Natural Science Foundation of China[61775090,62174075] ; Shenzhen Science and Technology Program[JCYJ20210324105400002] ; Guangdong University Research Program[2020ZDZX3062]
WOS研究方向	Materials Science ; Optics
WOS类目	Materials Science, Multidisciplinary ; Optics
WOS记录号	WOS:000740660700001
出版者	WILEY-V C H VERLAG GMBH
来源库	Web of Science
引用统计	被引频次[WOS]：28
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/264402
专题	工学院_电子与电气工程系
作者单位	1.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China 2.Southern Univ Sci & Technol, Key Lab Energy Convers & Storage Technol, Minist Educ, Shenzhen 518055, Peoples R China
第一作者单位	电子与电气工程系
通讯作者单位	电子与电气工程系; 南方科技大学
第一作者的第一单位	电子与电气工程系
推荐引用方式 GB/T 7714	Chen, Zinan,Chen, Shuming. Efficient and Stable Quantum-Dot Light-Emitting Diodes Enabled by Tin Oxide Multifunctional Electron Transport Layer[J]. Advanced Optical Materials,2022.
APA	Chen, Zinan,&Chen, Shuming.(2022).Efficient and Stable Quantum-Dot Light-Emitting Diodes Enabled by Tin Oxide Multifunctional Electron Transport Layer.Advanced Optical Materials.
MLA	Chen, Zinan,et al."Efficient and Stable Quantum-Dot Light-Emitting Diodes Enabled by Tin Oxide Multifunctional Electron Transport Layer".Advanced Optical Materials (2022).