Intrinsic valley Hall transport in atomically thin MoS2

Wu, Zefei1,2; Zhou, Benjamin T.1,2; Cai, Xiangbin1,2; Cheung, Patrick3; Liu, Gui-Bin4; Huang, Meizhen1,2; Lin, Jiangxiazi1,2; Han, Tianyi1,2; An, Liheng1,2; Wang, Yuanwei1,2; Xu, Shuigang1,2; Long, Gen1,2; Cheng, Chun5; Law, Kam Tuen1,2; Zhang, Fan3; Wang, Ning1,2

2019-02-05

10.1038/s41467-019-08629-9

Nature Communications   影响因子和分区

2041-1723

Electrons hopping in two-dimensional honeycomb lattices possess a valley degree of freedom in addition to charge and spin. In the absence of inversion symmetry, these systems were predicted to exhibit opposite Hall effects for electrons from different valleys. Such valley Hall effects have been achieved only by extrinsic means, such as substrate coupling, dual gating, and light illuminating. Here we report the first observation of intrinsic valley Hall transport without any extrinsic symmetry breaking in the non-centrosymmetric monolayer and trilayer MoS2, evidenced by considerable nonlocal resistance that scales cubically with local resistance. Such a hallmark survives even at room temperature with a valley diffusion length at micron scale. By contrast, no valley Hall signal is observed in the centrosymmetric bilayer MoS2. Our work elucidates the topological origin of valley Hall effects and marks a significant step towards the purely electrical control of valley degree of freedom in topological valleytronics.

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英语

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US Army Research Office[W911NF-18-1-0416]

Science & Technology - Other Topics

Multidisciplinary Sciences

WOS:000457749000019

NATURE PUBLISHING GROUP

Web of Science

1.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Peoples R China
2.Hong Kong Univ Sci & Technol, Ctr Quantum Mat, Hong Kong, Peoples R China
3.Univ Texas Dallas, Dept Phys, Richardson, TX 75080 USA
4.Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
5.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China

Wu, Zefei,Zhou, Benjamin T.,Cai, Xiangbin,et al. Intrinsic valley Hall transport in atomically thin MoS2[J]. Nature Communications,2019,10.

Wu, Zefei.,Zhou, Benjamin T..,Cai, Xiangbin.,Cheung, Patrick.,Liu, Gui-Bin.,...&Wang, Ning.(2019).Intrinsic valley Hall transport in atomically thin MoS2.Nature Communications,10.

Wu, Zefei,et al."Intrinsic valley Hall transport in atomically thin MoS2".Nature Communications 10(2019).