Origin of Ferroelectricity in Epitaxial Si-Doped HfO2 Films

Li, Tao1,2,3,4,5; Ye, Mao6; Sun, Zhenzhong1; Zhang, Nian7; Zhang, Wei2; Inguva, Saikumar8; Xie, Chunxiao1; Chen, Lang6; Wang, Yu3; Ke, Shanming3; Huang, Haitao4,5

2019-01-30

10.1021/acsami.8b19558

ACS Applied Materials & Interfaces   影响因子和分区

1944-8244

1944-8252

HfO2-based unconventional ferroelectric materials were recently discovered and have attracted a great deal of attention in both academia and industry. The growth of epitaxial Si-doped HfO2 films has opened up a route to understand the mechanism of ferroelectricity. Here, we used pulsed laser deposition to grow epitaxial Si-doped HfO2 films in different orientations of N-type SrTiO3 substrates. Polar nanodomains can be written and read using piezoforce microscopy, and these domains are reversibly switched with a phase change of 180 degrees. Films with different thicknesses displayed a coercive field E-c and a remnant polarization P-r of approximately 4-5 MV/cm and 8-32 mu C/cm(2), respectively. X-ray diffraction and high-resolution transmission electron microscopy (HRTEM) results identified that the as-grown Si-doped HfO2 films have strained fluorite structures. The ABAB stacking mode of the Hf atomic grid observed by HRTEM clearly demonstrates that the ferroelectricity originates from the noncentrosymmetric Pca2(1) polar structure. Combined with soft X-ray absorption spectra, the results showed that the Pca2(1) ferroelectric crystal structure manifested as an O sublattice distortion by the effect of the interface strain and Si dopant interactions, resulting in a nanoscaled ferroelectric ordered state because of further crystal splitting.

PLD epitaxial Si-doped HfO2 thin films N-type SrTiO3 substrates ferroelectricity XRD PFM HRTEM XAS

SCI ; EI

英语

其他

Science and Technology Planning Project of Guangdong[2014A010105058]

Science & Technology - Other Topics ; Materials Science

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000457816900051

AMER CHEMICAL SOC

20190606466308

Crystal atomic structure ; Ferroelectric materials ; Ferroelectricity ; Fluorspar ; Hafnium oxides ; High resolution transmission electron microscopy ; Interface states ; Pulsed laser deposition ; Silicon compounds ; Strontium titanates ; Thin films ; Titanium compounds ; X ray absorption ; X rays

Minerals:482.2 ; Electricity: Basic Concepts and Phenomena:701.1 ; Dielectric Materials:708.1 ; Electromagnetic Waves:711 ; Optical Devices and Systems:741.3 ; Laser Applications:744.9 ; Chemical Products Generally:804 ; Classical Physics; Quantum Theory; Relativity:931 ; Atomic and Molecular Physics:931.3 ; High Energy Physics; Nuclear Physics; Plasma Physics:932 ; High Energy Physics:932.1

Web of Science

1.Dongguan Univ Technol, Sch Mech Engn, Dongguan 523808, Peoples R China
2.Dongguan Univ Technol, Sch Elect Engn & Intelligentizat, Dongguan 523808, Peoples R China
3.Nanchang Univ, Sch Mat Sci & Engn, Nanchang 330031, Jiangxi, Peoples R China
4.Hong Kong Polytech Univ, Dept Appl Phys, Hung Horn, Kowloon, Hong Kong, Peoples R China
5.Hong Kong Polytech Univ, Mat Res Ctr, Hung Horn, Kowloon, Hong Kong, Peoples R China
6.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
7.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
8.Shenzhen Univ, Coll Mat Sci & Engn, Shenzhen 518060, Peoples R China

Li, Tao,Ye, Mao,Sun, Zhenzhong,et al. Origin of Ferroelectricity in Epitaxial Si-Doped HfO2 Films[J]. ACS Applied Materials & Interfaces,2019,11(4):4139-4144.

Li, Tao.,Ye, Mao.,Sun, Zhenzhong.,Zhang, Nian.,Zhang, Wei.,...&Huang, Haitao.(2019).Origin of Ferroelectricity in Epitaxial Si-Doped HfO2 Films.ACS Applied Materials & Interfaces,11(4),4139-4144.

Li, Tao,et al."Origin of Ferroelectricity in Epitaxial Si-Doped HfO2 Films".ACS Applied Materials & Interfaces 11.4(2019):4139-4144.