南方科技大学知识苑(SUSTech KC): Controlling the Polarity of the Molecular Beam Epitaxy Grown In-Bi Atomic Film on the Si(111) Surface

题名	Controlling the Polarity of the Molecular Beam Epitaxy Grown In-Bi Atomic Film on the Si(111) Surface
作者	Lin, Cho-Ying 1; Hsu, Chia-Hsiu 2; Huang, Yu-Zhang 1; Hsieh, Shih-Ching 1; Chen, Han-De 1; Huang, Li2 ; Huang, Zhi-Quan 3; Chuang, Feng-Chuan 3; Lin, Deng-Sung 1
通讯作者	Chuang, Feng-Chuan; Lin, Deng-Sung
发表日期	2019-01-24
DOI	10.1038/s41598-018-37051-2
发表期刊	Scientific Reports 影响因子和分区
ISSN	2045-2322
卷号	9
摘要	Synchrotron radiation core-level photoemission spectroscopy, scanning tunneling microscopy (STM), and first-principles calculations have been utilized to explore the growth processes and the atomic structure of the resulting films during the two-step molecular beam epitaxy (MBE) of In and Bi on the Si(111) surface. Deposition of 1.0-ML Bi on the In/Si(111)-(4 x 1) surface at room temperature results in Bi-terminated BiIn-(4 x 3) structures, which are stable up to similar to 300 degrees C annealing. By contrast, deposition of In on the beta-Bi/Si(111)-(root 3 x root 3) surface at room temperature results in three dimensional (3D) In islands. In both cases, annealing at 460 degrees C results in the same In-terminated In0.75Bi/Si(111)-(2 x 2) surface. Our DFT calculations confirm that the surface energy of In-terminated In0.75Bi/Si(111)-(2 x 2) system is lower than that of Bi-terminated Bi0.75In/Si(111)-(2 x 2). These findings provide means for the control of the polarity of the MBE In-Bi atomically thick films.
相关链接	[来源记录]
收录类别	SCI
语种	英语
学校署名	其他
资助项目	Science, Technology & Commission of Shenzhen Municipality[JCYJ20170817105201098] ; Science, Technology & Commission of Shenzhen Municipality[JCYJ20170817105132549]
WOS研究方向	Science & Technology - Other Topics
WOS类目	Multidisciplinary Sciences
WOS记录号	WOS:000456554600195
出版者	NATURE PUBLISHING GROUP
来源库	Web of Science
引用统计	被引频次[WOS]：5
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/26562
专题	理学院_物理系
作者单位	1.Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan 2.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China 3.Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan
推荐引用方式 GB/T 7714	Lin, Cho-Ying,Hsu, Chia-Hsiu,Huang, Yu-Zhang,et al. Controlling the Polarity of the Molecular Beam Epitaxy Grown In-Bi Atomic Film on the Si(111) Surface[J]. Scientific Reports,2019,9.
APA	Lin, Cho-Ying.,Hsu, Chia-Hsiu.,Huang, Yu-Zhang.,Hsieh, Shih-Ching.,Chen, Han-De.,...&Lin, Deng-Sung.(2019).Controlling the Polarity of the Molecular Beam Epitaxy Grown In-Bi Atomic Film on the Si(111) Surface.Scientific Reports,9.
MLA	Lin, Cho-Ying,et al."Controlling the Polarity of the Molecular Beam Epitaxy Grown In-Bi Atomic Film on the Si(111) Surface".Scientific Reports 9(2019).