Solution-Processed Double-Junction Quantum-Dot Light-Emitting Diodes with an EQE of Over 40%

Shen, Piaoyang1; Cao, Fan1; Wang, Haoran1; Wei, Bin1; Wang, Feijiu2; Sun, Xiao Wei3; Yang, Xuyong1

2019-01-09

10.1021/acsami.8b18940

ACS Applied Materials & Interfaces   影响因子和分区

1944-8244

Despite the rapid development in quantum-dot light-emitting diodes (QD-LEDs) with a single junction, it remains a big challenge to make tandem QD-LEDs with high performance. Here, we report solution-processed double junction tandem QD-LEDs with a high external quantum efficiency of 42.2% and a high current efficiency of 183.3 cd which are comparable to those of the best vacuum deposited tandem organic LEDs. Such high-efficiency devices are achieved by interface engineering of fully optimized single light-emitting units, which improves carriers' transport/injection balance and suppresses exciton quenching induced by ZnO, and design of an effective interconnecting layer consisting of poly(4-butylphenyl-diphenylamine) (poly-TPD)-mixed poly(9-vinylcarbazole) (PVK)/poly(3,4-ethylenedioxythiophene):polystyrene sulfonate/polyethylenimine ethoxylated-modified ZnO.

quantum dots tandem structure light-emitting diodes electroluminescence interfacial engineering

SCI ; EI

英语

通讯

National Natural Science Foundation of China[61605109] ; National Natural Science Foundation of China[51675322] ; National Natural Science Foundation of China[61735004]

Science & Technology - Other Topics ; Materials Science

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000455561200115

AMER CHEMICAL SOC

20190206368978

Diodes ; Efficiency ; Electroluminescence ; II-VI semiconductors ; Light ; Light emitting diodes ; Nanocrystals ; Quantum efficiency ; Semiconductor quantum dots ; Zinc oxide

Semiconductor Devices and Integrated Circuits:714.2 ; Light, Optics and Optical Devices:741 ; Light/Optics:741.1 ; Nanotechnology:761 ; Inorganic Compounds:804.2 ; Production Engineering:913.1 ; Quantum Theory; Quantum Mechanics:931.4

Web of Science

1.Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, 149 Yanchang Rd, Shanghai 200072, Peoples R China
2.Kyoto Univ, Inst Adv Energy, Uji, Kyoto 6110011, Japan
3.Southern Univ Sci & Technol, Dept Elect & Elect Engn, 1088 Xue Yuan Rd, Shenzhen 518055, Peoples R China

Shen, Piaoyang,Cao, Fan,Wang, Haoran,et al. Solution-Processed Double-Junction Quantum-Dot Light-Emitting Diodes with an EQE of Over 40%[J]. ACS Applied Materials & Interfaces,2019,11(1):1065-1070.

Shen, Piaoyang.,Cao, Fan.,Wang, Haoran.,Wei, Bin.,Wang, Feijiu.,...&Yang, Xuyong.(2019).Solution-Processed Double-Junction Quantum-Dot Light-Emitting Diodes with an EQE of Over 40%.ACS Applied Materials & Interfaces,11(1),1065-1070.

Shen, Piaoyang,et al."Solution-Processed Double-Junction Quantum-Dot Light-Emitting Diodes with an EQE of Over 40%".ACS Applied Materials & Interfaces 11.1(2019):1065-1070.