题名 | Catalytic growth of large area monolayer molybdenum disulfide film by chemical vapor deposition |
作者 | |
通讯作者 | Zhang, X. H.; Tang, Z. K. |
发表日期 | 2019-01
|
DOI | |
发表期刊 | |
ISSN | 0040-6090
|
卷号 | 669页码:371-376 |
摘要 | Large area monolayer molybdenum disulfide (MoS2) film grown on silica/silicon substrate was synthesized using a catalyst perylene-3, 4, 9, 10-tetracarboxylic acid tetrapotassium salt (PTAS) by the method of chemical vapor deposition. The properties of the monolayer MoS2 film were characterized using a number of techniques. The optical microscope images show the film is uniform and continuous on a large scale. The 0.7 nm film thickness measured by atomic force microscope, as well as the difference of 20 cm(-1) between the two characteristic Raman peaks, all prove that the film is single layer. The strong photoluminescence spectrum and image as well as the x-ray diffraction indicate that the monolayer MoS2 film has a good quality. The MoS2 film synthesized under the same conditions without PTAS was also characterized as a comparison. The results show that the MoS2 film tends to thicker without using PTAS, suggesting that PTAS can not only promote the formation of the MoS2 seeding, but also induce horizontal growth of the MoS2 film on the substrate. |
关键词 | |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 第一
; 通讯
|
资助项目 | Natural Science Foundation of Guangdong Province[2014A030313728]
|
WOS研究方向 | Materials Science
; Physics
|
WOS类目 | Materials Science, Multidisciplinary
; Materials Science, Coatings & Films
; Physics, Applied
; Physics, Condensed Matter
|
WOS记录号 | WOS:000453405600052
|
出版者 | |
EI入藏号 | 20184706121580
|
EI主题词 | Atomic force microscopy
; Chemical vapor deposition
; Film growth
; Layered semiconductors
; Monolayers
; Photoluminescence spectroscopy
; Silica
; Sulfur compounds
|
EI分类号 | Optical Devices and Systems:741.3
; Chemical Reactions:802.2
|
ESI学科分类 | MATERIALS SCIENCE
|
来源库 | Web of Science
|
引用统计 |
被引频次[WOS]:5
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/26699 |
专题 | 工学院_电子与电气工程系 |
作者单位 | 1.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Guangdong, Peoples R China 2.Univ Macau, Inst Appl Phys & Mat Engn, Ave Univ, Taipa 999078, Macau, Peoples R China |
第一作者单位 | 电子与电气工程系 |
通讯作者单位 | 电子与电气工程系 |
第一作者的第一单位 | 电子与电气工程系 |
推荐引用方式 GB/T 7714 |
Li, H.,Zhang, X. H.,Tang, Z. K.. Catalytic growth of large area monolayer molybdenum disulfide film by chemical vapor deposition[J]. THIN SOLID FILMS,2019,669:371-376.
|
APA |
Li, H.,Zhang, X. H.,&Tang, Z. K..(2019).Catalytic growth of large area monolayer molybdenum disulfide film by chemical vapor deposition.THIN SOLID FILMS,669,371-376.
|
MLA |
Li, H.,et al."Catalytic growth of large area monolayer molybdenum disulfide film by chemical vapor deposition".THIN SOLID FILMS 669(2019):371-376.
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条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
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