中文版 | English
题名

Catalytic growth of large area monolayer molybdenum disulfide film by chemical vapor deposition

作者
通讯作者Zhang, X. H.; Tang, Z. K.
发表日期
2019-01
DOI
发表期刊
ISSN
0040-6090
卷号669页码:371-376
摘要
Large area monolayer molybdenum disulfide (MoS2) film grown on silica/silicon substrate was synthesized using a catalyst perylene-3, 4, 9, 10-tetracarboxylic acid tetrapotassium salt (PTAS) by the method of chemical vapor deposition. The properties of the monolayer MoS2 film were characterized using a number of techniques. The optical microscope images show the film is uniform and continuous on a large scale. The 0.7 nm film thickness measured by atomic force microscope, as well as the difference of 20 cm(-1) between the two characteristic Raman peaks, all prove that the film is single layer. The strong photoluminescence spectrum and image as well as the x-ray diffraction indicate that the monolayer MoS2 film has a good quality. The MoS2 film synthesized under the same conditions without PTAS was also characterized as a comparison. The results show that the MoS2 film tends to thicker without using PTAS, suggesting that PTAS can not only promote the formation of the MoS2 seeding, but also induce horizontal growth of the MoS2 film on the substrate.
关键词
相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
学校署名
第一 ; 通讯
资助项目
Natural Science Foundation of Guangdong Province[2014A030313728]
WOS研究方向
Materials Science ; Physics
WOS类目
Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS记录号
WOS:000453405600052
出版者
EI入藏号
20184706121580
EI主题词
Atomic force microscopy ; Chemical vapor deposition ; Film growth ; Layered semiconductors ; Monolayers ; Photoluminescence spectroscopy ; Silica ; Sulfur compounds
EI分类号
Optical Devices and Systems:741.3 ; Chemical Reactions:802.2
ESI学科分类
MATERIALS SCIENCE
来源库
Web of Science
引用统计
被引频次[WOS]:5
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/26699
专题工学院_电子与电气工程系
作者单位
1.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Guangdong, Peoples R China
2.Univ Macau, Inst Appl Phys & Mat Engn, Ave Univ, Taipa 999078, Macau, Peoples R China
第一作者单位电子与电气工程系
通讯作者单位电子与电气工程系
第一作者的第一单位电子与电气工程系
推荐引用方式
GB/T 7714
Li, H.,Zhang, X. H.,Tang, Z. K.. Catalytic growth of large area monolayer molybdenum disulfide film by chemical vapor deposition[J]. THIN SOLID FILMS,2019,669:371-376.
APA
Li, H.,Zhang, X. H.,&Tang, Z. K..(2019).Catalytic growth of large area monolayer molybdenum disulfide film by chemical vapor deposition.THIN SOLID FILMS,669,371-376.
MLA
Li, H.,et al."Catalytic growth of large area monolayer molybdenum disulfide film by chemical vapor deposition".THIN SOLID FILMS 669(2019):371-376.
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