题名 | Impact of crystalline structures on the thermal stability and Schottky barrier height of NiGe/Ge contact |
作者 | |
通讯作者 | He, Jiaqing |
发表日期 | 2018-12-17
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DOI | |
发表期刊 | |
ISSN | 0003-6951
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EISSN | 1077-3118
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卷号 | 113期号:25 |
摘要 | We have investigated the effect of crystalline structures on the thermal stability and electrical properties of nickel monogermanide (NiGe)/Ge contacts. The crystalline structure of the NiGe layer was found to be a determining factor for the thermal stability. Compared with the polycrystalline NiGe layer, the epitaxial NiGe layer with the orientation NiGe(100) parallel to Ge(110) exhibited a promising thermal stability due to its uniform interface and small residual stress. We have also demonstrated the alleviation of Fermi level pinning (FLP) by controlling the crystalline structures of NiGe layers on Ge(110) substrates. These works give us a hint that controlling the crystalline structure of metal layers enables one to control the Schottky barrier height of metal/Ge contacts, and the origin of FLP is not due to the intrinsic factor, e.g., metal induced gap states, but due to the extrinsic factors such as strong anisotropy of the work function and disorders at the metal/Ge interfaces. Published by AIP Publishing. |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
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重要成果 | NI期刊
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学校署名 | 通讯
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资助项目 | Shenzhen Peacock Plan team[KQTD2016022619565991]
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WOS研究方向 | Physics
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WOS类目 | Physics, Applied
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WOS记录号 | WOS:000454216900025
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出版者 | |
EI入藏号 | 20190106334438
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EI主题词 | Crystalline materials
; Germanium compounds
; Interface states
; Metals
; Schottky barrier diodes
; Semiconductor metal boundaries
; Stability
; Thermodynamic stability
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EI分类号 | Thermodynamics:641.1
; Semiconductor Devices and Integrated Circuits:714.2
; Classical Physics; Quantum Theory; Relativity:931
; High Energy Physics; Nuclear Physics; Plasma Physics:932
; Crystalline Solids:933.1
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ESI学科分类 | PHYSICS
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来源库 | Web of Science
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引用统计 |
被引频次[WOS]:1
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/26780 |
专题 | 公共分析测试中心 理学院_物理系 |
作者单位 | 1.Nagoya Univ, Grad Sch Engn, Dept Mat Phys, Nagoya, Aichi 4648603, Japan 2.Southern Univ Sci & Technol, Mat Characterizat & Preparat Ctr, Shenzhen 518055, Peoples R China 3.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China |
第一作者单位 | 公共分析测试中心; 物理系 |
通讯作者单位 | 公共分析测试中心; 物理系 |
推荐引用方式 GB/T 7714 |
Deng, Yunsheng,He, Dongsheng,Qiu, Yang,et al. Impact of crystalline structures on the thermal stability and Schottky barrier height of NiGe/Ge contact[J]. APPLIED PHYSICS LETTERS,2018,113(25).
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APA |
Deng, Yunsheng,He, Dongsheng,Qiu, Yang,Gu, Rui,He, Jiaqing,&Nakatsuka, Osamu.(2018).Impact of crystalline structures on the thermal stability and Schottky barrier height of NiGe/Ge contact.APPLIED PHYSICS LETTERS,113(25).
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MLA |
Deng, Yunsheng,et al."Impact of crystalline structures on the thermal stability and Schottky barrier height of NiGe/Ge contact".APPLIED PHYSICS LETTERS 113.25(2018).
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条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
Deng-2018-Impact of (1823KB) | -- | -- | 限制开放 | -- |
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