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题名

Impact of crystalline structures on the thermal stability and Schottky barrier height of NiGe/Ge contact

作者
通讯作者He, Jiaqing
发表日期
2018-12-17
DOI
发表期刊
ISSN
0003-6951
EISSN
1077-3118
卷号113期号:25
摘要
We have investigated the effect of crystalline structures on the thermal stability and electrical properties of nickel monogermanide (NiGe)/Ge contacts. The crystalline structure of the NiGe layer was found to be a determining factor for the thermal stability. Compared with the polycrystalline NiGe layer, the epitaxial NiGe layer with the orientation NiGe(100) parallel to Ge(110) exhibited a promising thermal stability due to its uniform interface and small residual stress. We have also demonstrated the alleviation of Fermi level pinning (FLP) by controlling the crystalline structures of NiGe layers on Ge(110) substrates. These works give us a hint that controlling the crystalline structure of metal layers enables one to control the Schottky barrier height of metal/Ge contacts, and the origin of FLP is not due to the intrinsic factor, e.g., metal induced gap states, but due to the extrinsic factors such as strong anisotropy of the work function and disorders at the metal/Ge interfaces. Published by AIP Publishing.
相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
重要成果
NI期刊
学校署名
通讯
资助项目
Shenzhen Peacock Plan team[KQTD2016022619565991]
WOS研究方向
Physics
WOS类目
Physics, Applied
WOS记录号
WOS:000454216900025
出版者
EI入藏号
20190106334438
EI主题词
Crystalline materials ; Germanium compounds ; Interface states ; Metals ; Schottky barrier diodes ; Semiconductor metal boundaries ; Stability ; Thermodynamic stability
EI分类号
Thermodynamics:641.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Classical Physics; Quantum Theory; Relativity:931 ; High Energy Physics; Nuclear Physics; Plasma Physics:932 ; Crystalline Solids:933.1
ESI学科分类
PHYSICS
来源库
Web of Science
引用统计
被引频次[WOS]:1
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/26780
专题公共分析测试中心
理学院_物理系
作者单位
1.Nagoya Univ, Grad Sch Engn, Dept Mat Phys, Nagoya, Aichi 4648603, Japan
2.Southern Univ Sci & Technol, Mat Characterizat & Preparat Ctr, Shenzhen 518055, Peoples R China
3.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
第一作者单位公共分析测试中心;  物理系
通讯作者单位公共分析测试中心;  物理系
推荐引用方式
GB/T 7714
Deng, Yunsheng,He, Dongsheng,Qiu, Yang,et al. Impact of crystalline structures on the thermal stability and Schottky barrier height of NiGe/Ge contact[J]. APPLIED PHYSICS LETTERS,2018,113(25).
APA
Deng, Yunsheng,He, Dongsheng,Qiu, Yang,Gu, Rui,He, Jiaqing,&Nakatsuka, Osamu.(2018).Impact of crystalline structures on the thermal stability and Schottky barrier height of NiGe/Ge contact.APPLIED PHYSICS LETTERS,113(25).
MLA
Deng, Yunsheng,et al."Impact of crystalline structures on the thermal stability and Schottky barrier height of NiGe/Ge contact".APPLIED PHYSICS LETTERS 113.25(2018).
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