Defect Engineering in Single-Layer MoS2 Using Heavy Ion Irradiation

He, Zuyun1; Zhao, Ran2; Chen, Xiaofei3; Chen, Huijun1; Zhu, Yunmin1; Su, Huimin4,5; Huang, Shengxi6; Xue, Jianming7; Dai, Junfeng4,5; Cheng, Shuang1; Liu, Meilin8; Wang, Xinwei2; Chen, Yan1

2018-12-12

10.1021/acsami.8b17145

ACS Applied Materials & Interfaces   影响因子和分区

1944-8244

1944-8252

Transition metal dichalcogenides (TMDs) have attracted much attention due to their promising optical, electronic, magnetic, and catalytic properties. Engineering the defects in TMDs represents an effective way to achieve novel functionalities and superior performance of TMDs devices. However, it remains a significant challenge to create defects in TMDs in a controllable manner or to correlate the nature of defects with their functionalities. In this work, taking single-layer MoS2 as a model system, defects with controlled densities are generated by 500 keV Au irradiation with different ion fluences, and the generated defects are mostly S vacancies. We further show that the defects introduced by ion irradiation can significantly affect the properties of the single-layer MoS2, leading to considerable changes in its photoluminescence characteristics and electrocatalytic behavior. As the defect density increases, the characteristic photoluminescence peak of MoS2 first blueshifts and then redshifts, which is likely due to the electron transfer from MoS2 to the adsorbed O-2 at the defect sites. The generation of the defects can also strongly improve the hydrogen evolution reaction activity of MoS2, attributed to the modified adsorption of atomic hydrogen at the defects.

MoS2 defect engineering ion beam PL Raman

SCI ; EI

英语

其他

Guangzhou Science and Technology Program General Projects[201707010146]

Science & Technology - Other Topics ; Materials Science

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000453488900074

AMER CHEMICAL SOC

20185006237407

Defects ; Heavy ions ; Hydrogen ; Ion beams ; Ion bombardment ; Layered semiconductors ; Molybdenum compounds ; Photoluminescence ; Transition metals

Metallurgy and Metallography:531 ; Light/Optics:741.1 ; Chemical Products Generally:804 ; High Energy Physics:932.1 ; Materials Science:951

Web of Science

1.South China Univ Technol, Guangzhou Key Lab Surface Chem Energy Mat, New Energy Res Inst, Sch Environm & Energy, Guangzhou 510006, Guangdong, Peoples R China
2.Peking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R China
3.China Inst Nucl Informat & Econ, Beijing 100871, Peoples R China
4.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
5.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China
6.Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA
7.Peking Univ, Sch Phys, State Key Lab Nucl Phys & Technol, Beijing 100871, Peoples R China
8.Georgia Inst Technol, Mat Sci & Engn, Atlanta, GA 30332 USA

He, Zuyun,Zhao, Ran,Chen, Xiaofei,et al. Defect Engineering in Single-Layer MoS2 Using Heavy Ion Irradiation[J]. ACS Applied Materials & Interfaces,2018,10(49):42524-42533.

He, Zuyun.,Zhao, Ran.,Chen, Xiaofei.,Chen, Huijun.,Zhu, Yunmin.,...&Chen, Yan.(2018).Defect Engineering in Single-Layer MoS2 Using Heavy Ion Irradiation.ACS Applied Materials & Interfaces,10(49),42524-42533.

He, Zuyun,et al."Defect Engineering in Single-Layer MoS2 Using Heavy Ion Irradiation".ACS Applied Materials & Interfaces 10.49(2018):42524-42533.