Optical properties of quasi-type-II structure in GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires

Li, Haolin1; Tang, Jilong1; Kang, Yubin1; Zhao, Haixia1; Fang, Dan1; Fang, Xuan1; Chen, Rui2; Wei, Zhipeng1

2018-12-03

10.1063/1.5053844

APPLIED PHYSICS LETTERS   影响因子和分区

0003-6951

1077-3118

The GaAsSb-based quantum well plays a very important role in optoelectronic devices due to its excellent wavelength tunability. When the dimension reduces, the quantum confinement effect will take place and the quantum well in nanowires will show many interesting characteristics. GaAsSb-based quantum-well nanowires are of contemporary interest. However, the properties of the quasitype-II structure in a single quantum well nanowire have been rarely investigated. Here, we grow GaAs/GaAs0.92Sb0.08/GaAs coaxial single quantum-well nanowires and discussed their power-dependent and temperature-dependent photoluminescence. We find that due to the small band offset of conduction bands, both type-I like and type-II like emission exist in our nanowires. When electrons obtain enough thermal energy through collisions or surrounding environment, they will overcome the barrier and diffuse to the GaAs conduction band, which contributes to the type-II like recombination. These results show the optical property of the quasi-type-II quantum well in nanowires, which can pave the way toward future nanoscale quantum well devices. Published by AIP Publishing.

SCI ; EI

英语

NI期刊

其他

Shenzhen Science and Technology Innovation Commission[KQJSCX20170726145748] ; Shenzhen Science and Technology Innovation Commission[JCYJ20150930160634263] ; Shenzhen Science and Technology Innovation Commission[KQTD2015071710313656]

Physics

Physics, Applied

WOS:000452555500029

AMER INST PHYSICS

20185006237390

Conduction bands ; Gallium arsenide ; III-V semiconductors ; Nanowires ; Optical properties ; Optoelectronic devices ; Semiconducting gallium

Single Element Semiconducting Materials:712.1.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Optical Devices and Systems:741.3 ; Nanotechnology:761 ; Chemical Products Generally:804 ; High Energy Physics:932.1 ; Solid State Physics:933

PHYSICS

Web of Science

1.Changchun Univ Sci & Technol, Sch Sci, State Key Lab High Power Semicond Laser, 7089 Wei Xing Rd, Changchun 130022, Jilin, Peoples R China
2.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Guangdong, Peoples R China

Li, Haolin,Tang, Jilong,Kang, Yubin,et al. Optical properties of quasi-type-II structure in GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires[J]. APPLIED PHYSICS LETTERS,2018,113(23).

Li, Haolin.,Tang, Jilong.,Kang, Yubin.,Zhao, Haixia.,Fang, Dan.,...&Wei, Zhipeng.(2018).Optical properties of quasi-type-II structure in GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires.APPLIED PHYSICS LETTERS,113(23).

Li, Haolin,et al."Optical properties of quasi-type-II structure in GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires".APPLIED PHYSICS LETTERS 113.23(2018).