| 题名 | A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability |
| 作者 | |
| 通讯作者 | An, Judy Xilin; Yu, Hongyu |
| 发表日期 | 2018-12
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| DOI | |
| 发表期刊 | |
| ISSN | 2079-9292
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| 卷号 | 7期号:12 |
| 摘要 | GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optimizations will be discussed. Then, the latest progress in device fabrication technologies will be presented. Finally, some promising device structures from simulation studies will be discussed. |
| 关键词 | |
| 相关链接 | [来源记录] |
| 收录类别 | |
| 语种 | 英语
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| 学校署名 | 第一
; 通讯
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| 资助项目 | Research of the Reliability Mechanism and Circuit Simulation of GaN HEMT[2017A050506002]
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| WOS研究方向 | Engineering
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| WOS类目 | Engineering, Electrical & Electronic
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| WOS记录号 | WOS:000455067800036
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| 出版者 | |
| 来源库 | Web of Science
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| 引用统计 |
被引频次[WOS]：118
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| 成果类型 | 期刊论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/26853 |
| 专题 | 工学院_电子与电气工程系 公共分析测试中心 |
| 作者单位 | 1.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China 2.Southern Univ Sci & Technol, Mat Characterizat & Preparat Ctr, Shenzhen 518055, Peoples R China 3.Shenzhen Key Lab Third Generat Semicond, Shenzhen 518055, Peoples R China 4.GaN Device Engn Technol Res Ctr Guangdong, Shenzhen 518055, Peoples R China |
| 第一作者单位 | 电子与电气工程系 |
| 通讯作者单位 | 电子与电气工程系 |
| 第一作者的第一单位 | 电子与电气工程系 |
| 推荐引用方式 GB/T 7714 |
Zeng, Fanming,An, Judy Xilin,Zhou, Guangnan,et al. A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability[J]. Electronics,2018,7(12).
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| APA |
Zeng, Fanming.,An, Judy Xilin.,Zhou, Guangnan.,Li, Wenmao.,Wang, Hui.,...&Yu, Hongyu.(2018).A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability.Electronics,7(12).
|
| MLA |
Zeng, Fanming,et al."A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability".Electronics 7.12(2018).
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| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
| electronics-07-00377（3129KB） | -- | -- | 开放获取 | -- | 浏览 | |
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