题名 | Interlayer-expanded and defect-rich metal dichalcogenide (MX2) nanosheets for active and stable hydrogen evolution |
作者 | |
通讯作者 | Xu, Jun; Zhang, Junjun |
发表日期 | 2018-12
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DOI | |
发表期刊 | |
ISSN | 2052-1553
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卷号 | 5期号:12页码:3140-3147 |
摘要 | Layered metal dichalcogenides (MX2) constructed from 2D covalently bonded monolayers are an exciting family as promising low-cost electrocatalysts towards the hydrogen evolution reaction (HER). Defect engineering of layered lattices to fully utilize MX2 nanosheets is highly desirable. Herein, we report a universal synthesis of defective MX2 nanosheets by modulating both the basal planes and the interlayers. A series of basal plane-disordered and interlayer-expanded MX2 (M = Mo, W, Sn; X = S, Se) nanosheets are synthesized. Interlayer spacings of the MX2 nanosheets are significantly enlarged to 0.93-1.05 nm with an increase of 0.34-0.40 nm, owing to species intercalation. Abundant defects resulting from the wide interlayer expansion and the disordered basal planes offer extensive unsaturated chalcogen atoms as active sites for HER. Consequently, interlayer-expanded and defect-rich (IEDR) MX2 catalysts exhibit striking activities, delivering small Tafel slopes, low onset overpotentials, large cathodic current densities and excellent long-term stabilities. Our work paves a new pathway to improve the electrocatalytic HER activity by defect modulation. |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 通讯
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资助项目 | Natural Science Foundation of Guangdong Province[2018A030310225]
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WOS研究方向 | Chemistry
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WOS类目 | Chemistry, Inorganic & Nuclear
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WOS记录号 | WOS:000452114200018
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出版者 | |
EI入藏号 | 20185006239018
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EI主题词 | Catalyst Activity
; Electrocatalysts
; Hydrogen
; Nanosheets
|
EI分类号 | Nanotechnology:761
; Chemical Agents And Basic Industrial Chemicals:803
; Chemical Products Generally:804
; Solid State Physics:933
; Materials Science:951
|
来源库 | Web of Science
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引用统计 |
被引频次[WOS]:17
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/26870 |
专题 | 工学院_材料科学与工程系 |
作者单位 | 1.Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Anhui, Peoples R China 2.Hefei Univ Technol, Micro Electromech Syst Res Ctr Engn & Technol Anh, Hefei 230009, Anhui, Peoples R China 3.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China |
通讯作者单位 | 材料科学与工程系 |
推荐引用方式 GB/T 7714 |
Xu, Jun,Huang, Yanyan,Cheng, Xialan,et al. Interlayer-expanded and defect-rich metal dichalcogenide (MX2) nanosheets for active and stable hydrogen evolution[J]. Inorganic Chemistry Frontiers,2018,5(12):3140-3147.
|
APA |
Xu, Jun.,Huang, Yanyan.,Cheng, Xialan.,Liu, Tong.,Lu, Yingchun.,...&Zhang, Junjun.(2018).Interlayer-expanded and defect-rich metal dichalcogenide (MX2) nanosheets for active and stable hydrogen evolution.Inorganic Chemistry Frontiers,5(12),3140-3147.
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MLA |
Xu, Jun,et al."Interlayer-expanded and defect-rich metal dichalcogenide (MX2) nanosheets for active and stable hydrogen evolution".Inorganic Chemistry Frontiers 5.12(2018):3140-3147.
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