Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor

Sokolovskij, Robert1,2,3; Zhang, Jian2,4; Iervolino, Elina2; Zhao, Changhui2; Santagata, Fabio1; Wang, Fei2,5; Yu, Hongyu2,5; Sarro, Pasqualina M.1; Zhang, Guo Qi1

2018-11-20

10.1016/j.snb.2018.08.015

SENSORS AND ACTUATORS B-CHEMICAL   影响因子和分区

0925-4005

AlGaN/GaN high electron mobility transistor (HEMT)-based sensors with catalytic platinum gate were micro-fabricated on commercially available epitaxial wafers and extensively characterized for ppm level hydrogen sulfide (H2S) detection for industrial safety applications. High operating temperature above 150 degrees C enabled large signal variation (Delta I-DS) of 2.17 and sensing response of 112% for 90 ppm H2S in dry air as well as high stability across a wide range of biasing conditions. Transient response measurements demonstrated stable operation, superb response and recovery, with good repeatability. The measured sensing signal rise (fall) times reduced from 476 (1316) s to 219 (507) s when the temperature was increased from 200 degrees C to 250 degrees C. The response to 90 ppm H2S was 4.5x larger than to H-2 and the device showed stable operation over an extended time period.

AlGaN/GaN Pt HEMT H2S Gas sensor 2DEG

SCI ; EI

英语

其他

State Key Laboratory of Solid State Lighting, Changzhou base[JCYJ20160226192639004] ; State Key Laboratory of Solid State Lighting, Changzhou base[JCYJ20170412153356899] ; State Key Laboratory of Solid State Lighting, Changzhou base[2017A050506002]

Chemistry ; Electrochemistry ; Instruments & Instrumentation

Chemistry, Analytical ; Electrochemistry ; Instruments & Instrumentation

WOS:000443960000072

ELSEVIER SCIENCE SA

20183205676024

Accident prevention ; Aluminum gallium nitride ; Chemical sensors ; Gallium nitride ; Hydrogen sulfide ; III-V semiconductors ; Platinum ; Risk management ; Sulfur compounds ; Sulfur determination ; Transient analysis ; Two dimensional electron gas

Precious Metals:547.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Chemistry:801 ; Inorganic Compounds:804.2 ; Accidents and Accident Prevention:914.1

CHEMISTRY

Web of Science

1.Delft Univ Technol, Dept Microelect, NL-2628 CD Delft, Netherlands
2.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
3.State Key Lab Solid State Lighting, Changzhou 213161, Peoples R China
4.Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
5.Shenzhen Key Lab Third Generat Semicond, Shenzhen 518055, Peoples R China

Sokolovskij, Robert,Zhang, Jian,Iervolino, Elina,et al. Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor[J]. SENSORS AND ACTUATORS B-CHEMICAL,2018,274:636-644.

Sokolovskij, Robert.,Zhang, Jian.,Iervolino, Elina.,Zhao, Changhui.,Santagata, Fabio.,...&Zhang, Guo Qi.(2018).Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor.SENSORS AND ACTUATORS B-CHEMICAL,274,636-644.

Sokolovskij, Robert,et al."Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor".SENSORS AND ACTUATORS B-CHEMICAL 274(2018):636-644.