题名 | Imide-Functionalized Thiazole-Based Polymer Semiconductors: Synthesis, Structure-Property Correlations, Charge Carrier Polarity, and Thin-Film Transistor Performance |
作者 | |
通讯作者 | Lu, Xinhui; Guo, Xugang |
发表日期 | 2018-11-13
|
DOI | |
发表期刊 | |
ISSN | 0897-4756
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EISSN | 1520-5002
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卷号 | 30期号:21页码:7988-8001 |
摘要 | Imide-functionalized arenes, exemplified by naphthalene diimides (NDIs), perylene diimides (PDIs), and bithiophene imides (BTIs), are the most promising building blocks for constructing high-performance n-type polymers. In order to reduce the steric hindrance associated with NDI- and PDI-based polymers and to address the high-lying LUMO issue of BTI-based polymers, herein a highly electron-deficient imidefunctionalized bithiazole, N-alky1-5,5 '-bithiazole-4,4 '-dicarboximide (BTzI), was successfully synthesized via an efficient C-H activation. Single crystal of BTzI model compound showed a planar backbone with close pi-stacking distances (3.2-3.3 angstrom). The N,N'-bis (2 -alkyl)-2,2 '-bithiazolethieny1-4,4 ',10,10 '-tetracarboxdiimide (DTzTI) was also used for constructing polymer semiconductors. Compared to DTzTI, BTzI is more electron-deficient, rendering it highly appealing for enabling n-type polymers. On the basis of BTzI and DTzTI, a series of polymers, including acceptor-acceptor homopolymers, and donor-acceptor and donor-acceptor-acceptor copolymers, were synthesized, which feature different contents of acceptor units in polymeric backbones. As imide content increases, the polymer FMO levels were gradually lowered, yielding a transition of charge carrier from ambipolarity to unipolar n-type in organic thin-film transistors (OTFTs). The acceptor-acceptor homopolymer PBTzI possesses the deepest LUMO/HOMO level of -3.94/-6.17 eV, enabling minimal off-current (I-off) of 10(-10)-10(-11) A in OTFTs. The highest electron mobility of 1.61 cm(2) V-1 s(-1) accompanied by small I-off of 10(-10) -10(-11) A and high on-current/off-current ratio (I-on/I-off) of 10(7)-10(8) was achieved from OTFTs using PDTzTI homopolymer, showing the pronounced advantages of acceptor-acceptor homopolymer approach for developing unipolar n-type polymer semiconductors. The correlations between the FMO levels and the transistor performances underscore the significance of FMO tuning for enabling unipolar electron transport. The results demonstrate that imide-functionalized thiazoles are excellent units for constructing high-performance n-type polymers. Moreover, the synthetic routes to these highly electron-deficient imide-functionalized thiazoles and the polymer structure-property correlations developed here are informative for materials invention in organic electronics. |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 第一
; 通讯
|
资助项目 | Research Grant Council of Hong Kong[14314216]
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WOS研究方向 | Chemistry
; Materials Science
|
WOS类目 | Chemistry, Physical
; Materials Science, Multidisciplinary
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WOS记录号 | WOS:000450696100066
|
出版者 | |
EI入藏号 | 20184305986375
|
EI主题词 | Activation analysis
; Amines
; Charge carriers
; Electron transport properties
; Field effect transistors
; Homopolymerization
; Naphthalene
; Organic polymers
; Semiconducting organic compounds
; Single crystals
; Thin film circuits
; Thin films
|
EI分类号 | Electricity: Basic Concepts and Phenomena:701.1
; Semiconductor Devices and Integrated Circuits:714.2
; Organic Compounds:804.1
; Organic Polymers:815.1.1
; Crystalline Solids:933.1
|
ESI学科分类 | MATERIALS SCIENCE
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来源库 | Web of Science
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引用统计 |
被引频次[WOS]:89
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/26969 |
专题 | 工学院_材料科学与工程系 |
作者单位 | 1.Southern Univ Sci & Technol SUSTech, Dept Mat Sci & Engn, 1088 Xueyuan Rd, Shenzhen 518055, Guangdong, Peoples R China 2.Southern Univ Sci & Technol SUSTech, Shenzhen Key Lab Printed Organ Elect, 1088 Xueyuan Rd, Shenzhen 518055, Guangdong, Peoples R China 3.Southwest Petr Univ, Sch Mat Sci & Engn, Chengdu 610500, Sichuan, Peoples R China 4.Chinese Univ Hong Kong, Dept Phys, Hong Kong 999077, Hong Kong, Peoples R China 5.Northwestern Univ, Dept Chem, 2145 Sheridan Rd, Evanston, IL 60208 USA 6.Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA |
第一作者单位 | 材料科学与工程系; 南方科技大学 |
通讯作者单位 | 材料科学与工程系; 南方科技大学 |
第一作者的第一单位 | 材料科学与工程系 |
推荐引用方式 GB/T 7714 |
Shi, Yongqiang,Guo, Han,Qin, Minchao,et al. Imide-Functionalized Thiazole-Based Polymer Semiconductors: Synthesis, Structure-Property Correlations, Charge Carrier Polarity, and Thin-Film Transistor Performance[J]. CHEMISTRY OF MATERIALS,2018,30(21):7988-8001.
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APA |
Shi, Yongqiang.,Guo, Han.,Qin, Minchao.,Wan, Yuxi.,Zhao, Jiuyang.,...&Guo, Xugang.(2018).Imide-Functionalized Thiazole-Based Polymer Semiconductors: Synthesis, Structure-Property Correlations, Charge Carrier Polarity, and Thin-Film Transistor Performance.CHEMISTRY OF MATERIALS,30(21),7988-8001.
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MLA |
Shi, Yongqiang,et al."Imide-Functionalized Thiazole-Based Polymer Semiconductors: Synthesis, Structure-Property Correlations, Charge Carrier Polarity, and Thin-Film Transistor Performance".CHEMISTRY OF MATERIALS 30.21(2018):7988-8001.
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条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
Shi-2018-Imide-Funct(10130KB) | -- | -- | 限制开放 | -- |
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