题名 | Origin of Positive Aging in Quantum-Dot Light-Emitting Diodes |
作者 | |
通讯作者 | Chen, Shuming |
发表日期 | 2018-10
|
DOI | |
发表期刊 | |
ISSN | 2198-3844
|
卷号 | 5期号:10 |
摘要 | The phenomenon of positive aging, i.e., efficiency increased with time, is observed in quantum-dot light-emitting diodes (QLEDs). For example, the external quantum efficiency (EQE) of blue QLEDs is significantly improved from 4.93% to 12.97% after storage for 8 d. The origin of such positive aging is thoroughly investigated. The finding indicates that the interfacial reaction between Al cathode and ZnMgO electron transport layer accounts for such improvement. During shelf-aging, the Al slowly reacts with the oxygen from ZnMgO, and consequently, leads to the formation of AlOx and the production of oxygen vacancies in ZnMgO. The AlOx interlayer reduces the electron injection barrier while the oxygen vacancies increase the conductivity of ZnMgO and, as a result, the electron injection is effectively enhanced. Moreover, the AlOx can effectively suppress the quenching of excitons by metal electrode. Due to the enhancement of electron injection and suppression of exciton quenching, the aged blue, green, and red QLEDs exhibit a 2.6-, 1.3-, and 1.25-fold efficiency improvement, respectively. The studies disclose the origin of positive aging and provide a new insight into the exciton quenching mechanisms, which would be useful for further constructing efficient QLED devices. |
关键词 | |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 第一
; 通讯
|
资助项目 | Shenzhen Peacock Plan[KQTD2015071710313656]
|
WOS研究方向 | Chemistry
; Science & Technology - Other Topics
; Materials Science
|
WOS类目 | Chemistry, Multidisciplinary
; Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
|
WOS记录号 | WOS:000447632000004
|
出版者 | |
EI入藏号 | 20183105648736
|
EI主题词 | Aluminum
; Diodes
; Efficiency
; Electrodes
; Electron injection
; Electron transport properties
; Excitons
; Light emitting diodes
; Magnesium compounds
; Nanocrystals
; Organic light emitting diodes (OLED)
; Oxygen vacancies
; Quenching
; Semiconductor quantum dots
; Surface chemistry
; Zinc compounds
|
EI分类号 | Heat Treatment Processes:537.1
; Aluminum:541.1
; Semiconductor Devices and Integrated Circuits:714.2
; Physical Chemistry:801.4
; Production Engineering:913.1
; Quantum Theory; Quantum Mechanics:931.4
; Crystalline Solids:933.1
|
来源库 | Web of Science
|
引用统计 |
被引频次[WOS]:85
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/27141 |
专题 | 工学院_电子与电气工程系 |
作者单位 | Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China |
第一作者单位 | 电子与电气工程系 |
通讯作者单位 | 电子与电气工程系 |
第一作者的第一单位 | 电子与电气工程系 |
推荐引用方式 GB/T 7714 |
Su, Qiang,Sun, Yizhe,Zhang, Heng,et al. Origin of Positive Aging in Quantum-Dot Light-Emitting Diodes[J]. Advanced Science,2018,5(10).
|
APA |
Su, Qiang,Sun, Yizhe,Zhang, Heng,&Chen, Shuming.(2018).Origin of Positive Aging in Quantum-Dot Light-Emitting Diodes.Advanced Science,5(10).
|
MLA |
Su, Qiang,et al."Origin of Positive Aging in Quantum-Dot Light-Emitting Diodes".Advanced Science 5.10(2018).
|
条目包含的文件 | 条目无相关文件。 |
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