Enhanced perovskite phototransistor by multi-step slow annealing strategy

Cao, Mingxuan1,2; Zhang, Yating1,2; Yu, Yu1,2; Jin, Lufan2; Li, Yifan2; Chen, Zhiliang2; Che, Yongli2; Dai, Haitao3; Zhang, Guizhong2; Yao, Jianquan1,2

2018-10

10.1016/j.optmat.2018.07.027

OPTICAL MATERIALS   影响因子和分区

0925-3467

1873-1252

Methylammonium lead halide perovskites have received substantial attention in the research photovoltaic communities, because of excellent optoelectronic properties, including long electron-hole diffusion distance, large absorption coefficients in the UV-Vis spectral region, low-cost, solution-based processing and low binding energy of exciton. However, the crystal defects of perovskite films such as pinholes, defect and grain boundaries lead to carrier capture, trapping and scattering, so that reduce carrier mobility in the channel, which has become the bottleneck of high device performance and limited the application in photo detection. Here we report a simple and straightforward strategy based on a multi-step annealing process, which can effectively improves the coverage, smoothness, uniformity and crystallinity by restraining defects of pinhole formation. The field-effect mobilities of perovskite photodetector treated by one-step (OS) direct annealing method at room temperature shows mobility as 0.256 (0.129) cm(2)V( -l)s(-1) for holes (electrons), which increase to 2.32 (1.18) cm(2)V (-1)s( -1) for that treated by muti-step (MS) annealing method. The latter exhibits high figure of merit as detectivity of 8.94 x 10(11) Jones, a responsivity of 32 A/W and a short response time of 42 mu s. Moreover, it shows better stability with polymethylmethacrylate film covered, which can maintain 90% of initial performance for 10 days in ambient air. These findings demonstrate that MS annealing methods is simple yet effective and feasible to prepared high-efficient perovskite based photo detectors.

Hybrid perovskite Annealing technology Phototransistor Fast response Long-term stability

SCI ; EI

英语

第一 ; 通讯

Basic Research Program of Shenzhen[JCYJ20170412154447469]

Materials Science ; Optics

Materials Science, Multidisciplinary ; Optics

WOS:000446145200074

ELSEVIER SCIENCE BV

20183005599332

Annealing ; Binding energy ; Chemical detection ; Grain boundaries ; Lead compounds ; Photodetectors ; Phototransistors

Minerals:482.2 ; Heat Treatment Processes:537.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Chemistry:801 ; Physical Chemistry:801.4

MATERIALS SCIENCE

Web of Science

1.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
2.Tianjin Univ, Sch Precis Instruments & Optoelect Engn & Optoele, Minist Educ, Key Lab Optoelect Informat Technol, Tianjin 300072, Peoples R China
3.Tianjin Univ, Sch Sci, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R China

Cao, Mingxuan,Zhang, Yating,Yu, Yu,et al. Enhanced perovskite phototransistor by multi-step slow annealing strategy[J]. OPTICAL MATERIALS,2018,84:498-503.

Cao, Mingxuan.,Zhang, Yating.,Yu, Yu.,Jin, Lufan.,Li, Yifan.,...&Yao, Jianquan.(2018).Enhanced perovskite phototransistor by multi-step slow annealing strategy.OPTICAL MATERIALS,84,498-503.

Cao, Mingxuan,et al."Enhanced perovskite phototransistor by multi-step slow annealing strategy".OPTICAL MATERIALS 84(2018):498-503.