题名 | Control of Epitaxial BaFe2As2 Atomic Configurations with Substrate Surface Terminations |
作者 | |
通讯作者 | Eom, Chang-Beom |
发表日期 | 2018-10
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DOI | |
发表期刊 | |
ISSN | 1530-6984
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EISSN | 1530-6992
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卷号 | 18期号:10页码:6347-6352 |
摘要 | Atomic layer controlled growth of epitaxial thin films of unconventional superconductors opens the opportunity to discover novel high temperature superconductors. For instance, the interfacial atomic configurations may play an important role in superconducting behavior of monolayer FeSe on SrTiO3 and other Fe-based superconducting thin films. Here, we demonstrate a selective control of the atomic configurations in Co-doped BaFe2As2 epitaxial thin films and its strong influence on superconducting transition temperatures by manipulating surface termination of (001) SrTiO3 substrates. In a combination of first-principles calculations and high-resolution scanning transmission electron microscopy imaging, we show that Co-doped BaFe2As2 on TiO2-terminated SrTiO3 is a tetragonal structure with an atomically sharp interface and with an initial Ba layer. In contrast, Co-doped BaFe2As2 on SrO-terminated SrTiO3 has a monoclinic distortion and a BaFeO3-x initial layer. Furthermore, the superconducting transition temperature of Co-doped BaFe2As2 ultrathin films on TiO2-terminated SrTiO3 is significantly higher than that on SrO-terminated SrTiO3, which we attribute to shaper interfaces with no lattice distortions. This study allows the design of the interfacial atomic configurations and the effects of the interface on superconductivity in Fe-based superconductors. |
关键词 | |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
|
重要成果 | NI期刊
|
学校署名 | 其他
|
资助项目 | National Science Foundation[DMR-1306785]
; National Science Foundation[DMR-1157490]
; National Science Foundation[DMR-1644779]
|
WOS研究方向 | Chemistry
; Science & Technology - Other Topics
; Materials Science
; Physics
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WOS类目 | Chemistry, Multidisciplinary
; Chemistry, Physical
; Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
; Physics, Applied
; Physics, Condensed Matter
|
WOS记录号 | WOS:000447355400032
|
出版者 | |
ESI学科分类 | MATERIALS SCIENCE
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来源库 | Web of Science
|
引用统计 |
被引频次[WOS]:14
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/27201 |
专题 | 理学院_物理系 |
作者单位 | 1.Univ Wisconsin, Dept Mat Sci & Engn, 1509 Univ Ave, Madison, WI 53706 USA 2.Univ Calif Irvine, Dept Mat Sci & Engn, Irvine, CA 92679 USA 3.Univ Calif Irvine, Dept Phys & Astron, Irvine, CA 92679 USA 4.Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China 5.Nanjing Univ, Coll Engn & Appl Sci, Nanjing 210093, Jiangsu, Peoples R China 6.Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA 7.Univ Wisconsin, Dept Phys, 1150 Univ Ave, Madison, WI 53706 USA 8.Florida State Univ, Ctr Appl Superconduct, Natl High Magnet Field Lab, 2031 East Paul Dirac Dr, Tallahassee, FL 32310 USA 9.Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA 10.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China |
推荐引用方式 GB/T 7714 |
Kang, Jong-Hoon,Xie, Lin,Wang, Yi,et al. Control of Epitaxial BaFe2As2 Atomic Configurations with Substrate Surface Terminations[J]. NANO LETTERS,2018,18(10):6347-6352.
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APA |
Kang, Jong-Hoon.,Xie, Lin.,Wang, Yi.,Lee, Hyungwoo.,Campbell, Neil.,...&Eom, Chang-Beom.(2018).Control of Epitaxial BaFe2As2 Atomic Configurations with Substrate Surface Terminations.NANO LETTERS,18(10),6347-6352.
|
MLA |
Kang, Jong-Hoon,et al."Control of Epitaxial BaFe2As2 Atomic Configurations with Substrate Surface Terminations".NANO LETTERS 18.10(2018):6347-6352.
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