Gate-tunable weak antilocalization in a few-layer InSe

Zeng, Junwen1; Liang, Shi-Jun1; Gao, Anyuan1; Wang, Yu1; Pan, Chen1; Wu, Chenchen1; Liu, Erfu1; Zhang, Lili1; Cao, Tianjun1; Liu, Xiaowei1; Fu, Yajun1; Wang, Yiping1; Watanabe, Kenji2; Taniguchi, Takashi2; Lu, Haizhou3,4; Miao, Feng1

2018-09-18

10.1103/PhysRevB.98.125414

PHYSICAL REVIEW B   影响因子和分区

2469-9950

2469-9969

Indium selenide (InSe) has attracted tremendous research interest due to its high mobility and potential applications in next-generation electronics. However, the underlying transport mechanism of carriers in thin InSe at low temperatures remains unknown. Here we report the gate voltage and temperature-dependent magnetotransport properties of gamma-InSe transistor devices with Hall mobility up to 2455 cm(2) V-1 s(-1) at the temperature of 1.7 K. We observe a gate-tunable weak antilocalization behavior at lower magnetic field B, which shows a transition to weak localization at higher B region. We find that the magnetotransport data agree well with the Hikami-Larkin-Nagaoka theory. The conductivity and temperature dependence of phase-coherence length reveal that the electron-electron (e-e) interactions are dominated dephasing mechanism for electronic transport in gamma-InSe at low temperatures. The maximum phase-coherence length is found to be 320 nm at 1.7 K, larger than that of monolayer MoS2 and few-layer black phosphorus. These results enrich the fundamental understanding of electronic transport properties of InSe.

SCI ; EI

英语

其他

JSPS KAKENHI Grant[JP15K21722]

Materials Science ; Physics

Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:000444952200003

AMER PHYSICAL SOC

PHYSICS

Web of Science

1.Nanjing Univ, Natl Lab Solid State Microstruct, Sch Phys, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
2.Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
3.South Univ Sci & Technol China, Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China
4.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China

Zeng, Junwen,Liang, Shi-Jun,Gao, Anyuan,et al. Gate-tunable weak antilocalization in a few-layer InSe[J]. PHYSICAL REVIEW B,2018,98(12).

Zeng, Junwen.,Liang, Shi-Jun.,Gao, Anyuan.,Wang, Yu.,Pan, Chen.,...&Miao, Feng.(2018).Gate-tunable weak antilocalization in a few-layer InSe.PHYSICAL REVIEW B,98(12).

Zeng, Junwen,et al."Gate-tunable weak antilocalization in a few-layer InSe".PHYSICAL REVIEW B 98.12(2018).