Thermoelectric SnTe with Band Convergence, Dense Dislocations, and Interstitials through Sn Self-Compensation and Mn Alloying

Guo, Fengkai1; Cui, Bo1; Liu, Yuan2,3,7; Meng, Xianfu1; Cao, Jian1; Zhang, Yang4; He, Ran5; Liu, Weishu6; Wu, Haijun4; Pennycook, Stephen J.4; Cai, Wei1; Sui, Jiehe1

2018-09-13

10.1002/smll.201802615

Small   影响因子和分区

1613-6810

1613-6829

SnTe is known as an eco-friendly analogue of PbTe without toxic elements. However, the application potentials of pure SnTe are limited because of its high hole carrier concentration derived from intrinsic Sn vacancies, which lead to a high electrical thermal conductivity and low Seebeck coefficient. In this study, Sn self-compensation and Mn alloying could significantly improve the Seebeck coefficients in the whole temperature range through simultaneous carrier concentration optimization and band engineering, thereby leading to a large improvement of the power factors. Combining precipitates and atomic-scale interstitials due to Mn alloying with dense dislocations induced by long time annealing, the lattice thermal conductivity is drastically reduced. As a result, an enhanced figure of merit (ZT) of 1.35 is achieved for the composition of Sn0.94Mn0.09Te at 873 K and the ZT(ave) from 300 to 873 K is boosted to 0.78, which is of great significance for practical application. Hitherto, the ZT(max) and ZT(ave) of this work are the highest values among all single-element-doped SnTe systems.

band convergence dislocations interstitials self-compensation SnTe

SCI ; EI

英语

其他

National Natural Science Foundation of China[51622101] ; National Natural Science Foundation of China[51771065] ; National Natural Science Foundation of China[51471061]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:000444473300016

WILEY-V C H VERLAG GMBH

20183605786329

Alloying ; Dislocations (crystals) ; Hole concentration ; IV-VI semiconductors ; Manganese alloys ; Seebeck coefficient ; Thermal conductivity ; Thermoelectricity ; Tin compounds

Metallurgy:531.1 ; Manganese and Alloys:543.2 ; Thermodynamics:641.1 ; Electricity: Basic Concepts and Phenomena:701.1

Web of Science

1.Harbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150001, Heilongjiang, Peoples R China
2.Univ Houston, Dept Phys, Houston, TX 77204 USA
3.Univ Houston, TcSUH, Houston, TX 77204 USA
4.Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore
5.IFW Dresden, Inst Metall Mat, D-01069 Dresden, Germany
6.South Univ Sci & Technol China, Dept Mat Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China
7.Fresenius Kabi USA LLC, Melrose Pk, IL 60160 USA

Guo, Fengkai,Cui, Bo,Liu, Yuan,et al. Thermoelectric SnTe with Band Convergence, Dense Dislocations, and Interstitials through Sn Self-Compensation and Mn Alloying[J]. Small,2018,14(37).

Guo, Fengkai.,Cui, Bo.,Liu, Yuan.,Meng, Xianfu.,Cao, Jian.,...&Sui, Jiehe.(2018).Thermoelectric SnTe with Band Convergence, Dense Dislocations, and Interstitials through Sn Self-Compensation and Mn Alloying.Small,14(37).

Guo, Fengkai,et al."Thermoelectric SnTe with Band Convergence, Dense Dislocations, and Interstitials through Sn Self-Compensation and Mn Alloying".Small 14.37(2018).