Growth of a predicted two-dimensional topological insulator based on InBi-Si(111)-root 7 x root 7

Using combined scanning tunneling microscopy (STM) measurements and first-principles electronic structure calculations, we extensively studied the atomic and electronic properties of a root 7-InBi overlayer on Si(111). We propose and demonstrate an effective experimental process to successfully form a large well-ordered root 7 surface by depositing Bi atoms on the In-Si(111)-4 x 1 substrate. The STM images exhibit a honeycomb pattern. After performing an exhaustive computational search, we identified the atomic structures of the surface at In and Bi coverages of 6/7 and 3/7 monolayers, respectively. We discovered a trimer model with a lower energy than the previously proposed model. The simulated STM images of trimer models confirm the presence of the honeycomb pattern in accord with our experimental STM images. Most importantly, we found that the surface is robust, preserving the topologically nontrivial phase. Our edge state calculations verify that the InBi overlayer on Si(111) is indeed a two-dimensional (2D) topological insulator (TI). Moreover, hybrid functional calculations result in band gaps up to 70 meV, which is high enough for room-temperature experiments. Our findings lay the foundation for the materials realization of 2D TIs by growing an InBi overlayer on a Si(111) substrate.