Compositional engineering of metal-xanthate precursors toward (Bi1-xSbx)(2)S-3 (0 <= x <= 0.05) films with enhanced room temperature thermoelectric performance

Hu, Zhenyu1,2,3; Deng, Longhui2,3; Wu, Tingjun3; Wang, Jing4; Wu, Feiyan4; Chen, Lie4; Li, Qikai5; Liu, Weishu5; Lien, Shui-Yang6; Gao, Peng2,3

2021-12-01

10.1039/d1tc04394c

Journal of Materials Chemistry C   影响因子和分区

2050-7526

2050-7534

The preparation of high-performance thermoelectric thin films can be challenging. Herein, we report the preparation, characterization, and thermoelectric performance of morphology-controlled bismuth sulfide (Bi2S3) thin films using a single-source precursor, namely bismuth(III) ethylxanthate. Using this precursor, room-temperature thermoelectric thin-films could be prepared quickly and cost-effectively. We acquired the intrinsic Bi2S3 thin films with electrical conductivity of 14.23 S cm(-1) and Seebeck coefficient of -388.33 mu V K-1 at room temperature, which are comparable to that of the bulk Bi2S3. Furthermore, a higher Seebeck coefficient could be achieved by adopting a composition engineering method to achieve an antimony (Sb)-doping saki solution, in which the phonon scattering and dislocation density could be manipulated. By tuning the mole fraction of Sb in the films, we further improved the Seebeck coefficient to -516.35 mu V K-1 and the power factor to 170.10 mu W m(-1) K-2 with a solid solution of (Bi0.97Sb0.03)(2)S-3. Thus, the chalcogenide composition engineering protocol can be a universal methodology to fabricate target semiconductors for thin-film thermoelectric applications, which may broaden the application of thermoelectric films in the field of microelectronic devices.

SCI ; EI

英语

其他

Materials Science ; Physics

Materials Science, Multidisciplinary ; Physics, Applied

WOS:000741065000001

ROYAL SOC CHEMISTRY

20220711637469

Film preparation ; Layered semiconductors ; Microelectronics ; Seebeck coefficient ; Semiconductor doping ; Solid solutions ; Sulfur compounds ; Thin films

Thermoelectric Energy:615.4 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Solid State Physics:933 ; Electric Variables Measurements:942.2

Web of Science

1.Fuzhou Univ, Coll Chem, Fuzhou 350108, Fujian, Peoples R China
2.Chinese Acad Sci, Fujian Inst Res Struct Matter, CAS Key Lab Design & Assembly Funct Nanostruct, Fujian Prov Key Lab Nanomat, 155 Yangqiao Rd West, Fuzhou 350002, Peoples R China
3.Chinese Acad Sci, Xiamen Inst Rare Earth Mat, Xiamen Key Lab Rare Earth Photoelect Funct Mat, Xiamen 361021, Peoples R China
4.Nanchang Univ, Coll Chem, 999 Xuefu Ave, Nanchang 330031, Jiangxi, Peoples R China
5.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China
6.Xiamen Univ Technol, Sch Optoelect & Commun Engn, Xiamen 361024, Peoples R China

Hu, Zhenyu,Deng, Longhui,Wu, Tingjun,et al. Compositional engineering of metal-xanthate precursors toward (Bi1-xSbx)(2)S-3 (0 <= x <= 0.05) films with enhanced room temperature thermoelectric performance[J]. Journal of Materials Chemistry C,2021,10:1718-1726.

Hu, Zhenyu.,Deng, Longhui.,Wu, Tingjun.,Wang, Jing.,Wu, Feiyan.,...&Gao, Peng.(2021).Compositional engineering of metal-xanthate precursors toward (Bi1-xSbx)(2)S-3 (0 <= x <= 0.05) films with enhanced room temperature thermoelectric performance.Journal of Materials Chemistry C,10,1718-1726.

Hu, Zhenyu,et al."Compositional engineering of metal-xanthate precursors toward (Bi1-xSbx)(2)S-3 (0 <= x <= 0.05) films with enhanced room temperature thermoelectric performance".Journal of Materials Chemistry C 10(2021):1718-1726.